Effects of the Ba 3 (VO 4 ) 2 Additions on Microwave Dielectric Properties of (zr 0.8 Sn 0.2 )tio 4 Ceramics

Zhiyuan Zhang,Haikui Zhu,Yan Zhang,Yuhang Chen,Zhenxiao Fu,Kun Huang,Qitu Zhang

DOI: https://doi.org/10.1007/s10854-016-5765-x

2016-01-01

Journal of Materials Science Materials in Electronics

Abstract:The effects of the Ba3(VO4)2 (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 °C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 °C for 5 h and exhibit excellent microwave dielectric properties of ε r  = 36.6, Q × f = 46,000 GHz and τ f  = 1.47 ppm/°C.