Sintering Behavior and Microwave Dielectric Properties of Y 2 O 3 –zno Doped (zr 0.8 Sn 0.2 )tio 4 Ceramics

Qinglei Sun,Hongqing Zhou,Haikui Zhu,Hongqing Qi,Lisong Hu,Zhenxing Yue
DOI: https://doi.org/10.1007/s10854-016-4762-4
2016-01-01
Journal of Materials Science Materials in Electronics
Abstract:(Zr0.8Sn0.2)TiO4 (ZST) ceramics were fabricated via conventional solid-state reaction method. Sintering behavior, phase composition, microstructure and microwave dielectric properties of Y2O3–ZnO doped ZST ceramics were investigated. Only a single ZST phase was identified by X-ray diffraction patterns. The variation tendencies of dielectric constants as well as Q × f values were in accordance with the bulk densities. The appropriate Y2O3 and ZnO additions could not only efficiently lower the sintering temperature to 1240 °C, but also noticeably improve the densification and microwave dielectric properties of ZST ceramics. But excessive additives deteriorated the microstructures and comprehensive properties of samples. A dielectric constant ε r of 39.73, a Q × f value of 48,545 GHz (at 5.5 GHz), and a τ f value of −2.13 ppm/°C were obtained for 1 wt% ZnO doped ZST ceramics with 0.5 wt% Y2O3 addition sintered at 1240 °C.
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