Abstract:Through-silicon-vias (TSVs) can potentially be used to implement inductors in 3-D integrated systems for minimal footprint and large inductance. However, different from conventional 2-D spiral inductors, TSV inductors are fully buried in the lossy substrate, thus suffering from low quality factors. In this paper, we systematically examine how various process and design parameters affect their performance. A few interesting phenomena that are unique to TSV inductors are observed. We then propose a novel shield mechanism utilizing the microchannel, a technique conventionally used for heat removal, to reduce the substrate loss. The technique increases the quality factor and inductance of the TSV inductor by up to and , respectively. Finally, since full-wave simulations of 3-D structures are time-consuming, we develop a set of compressed sensing-based design strategies for microchannel-shielded TSV inductors, which only requires a minimal number of simulations. It enables us to implement microchannel-shielded TSV inductors of up to reduced area compared with spiral inductors of the same design specs (quality factor, inductance, and frequency). To the best of our knowledge, this is the very first in-depth study on TSV inductors to make them practical for high-frequency applications. We hope our study shall point out a new and exciting research direction for 3-D integrated circuit designers.

High frequency analysis and characterization of TSVs for high-speed integrated systems

Electrical Characterization of Through-Silicon Vias (TSV) with Different Physical Configurations

High-Frequency Electrothermal Characterization of TSV-Based Power Delivery Network

Frequency- and temperature-dependent modeling of coaxial through-silicon vias for 3-D ICs

On the Efficacy of Through-Silicon-Via Inductors

Electrothermal modelling and characterisation of submicron through-silicon carbon nanotube bundle vias for three-dimensional ICs

Different designs of TSVs for 3D IC: Signal integrity analysis with cascaded scattering matrix

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Measurement-based electrical characterization of through silicon vias and transmission lines for 3D integration

Fast time domain crosstalk analysis of through silicon vias based on equivalent circuit model

Bias-dependent High Frequency Characterization of Through-Silicon Via (TSV) for 3D Integration

Electrical Characterization of RF TSV for 3D Multi-Core and Heterogeneous ICs

3D Modeling and Finite-Element Full-Wave Simulation of TSV for Stack Up SIP Integration Applications

Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration

Impact of Technology Scaling on Electrical Characteristics of Through-Silicon Via Correlated with Equivalent Circuits

Multi-physics modeling of through-silicon vias with equivalent-circuit approach

Modeling and Application of Multi-Port TSV Networks in 3-D IC

Electrical modeling, simulation and SPICE model extraction of TSVs in silicon interposer

Capacitive coupling analysis of TSV array in 3D packaging

Modeling and analysis of TSV noise coupling and suppression methods for 20nm node and beyond

Overview and study of the 3D-TSV interconnects induced coupling in CMOS circuits