Abstract:This study introduces a novel graphene RF NEMS capacitive switch and conducts an extensive analysis of its RF performance using CST and COMSOL Multiphysics software. The switch's characteristic impedance matching is accomplished through a coplanar waveguide (CPW) structure, incorporating a dielectric layer topped with conductive graphene beam electrodes. Simulation results reveal that the monolayer graphene RF NEMS switch maintains an insertion loss of 0.003 ~ 0.015 dB and an isolation greater than 40 dB across an ultra-wideband (UWB) frequency range of DC ~ 140 GHz. Moreover, the switch demonstrates a switching time of 4.03 ps at a pull-in voltage of 1 V. The performance of multilayer graphene RF NEMS switches was also evaluated. The study further investigates the operational mechanism of the graphene RF NEMS switch and performs finite element analysis on the proposed design. The graphene RF NEMS switch discussed herein offers significant advantages, including minimal size, lightweight, cost-effectiveness, low pull-in voltage, rapid response time, excellent RF performance, and reduced space consumption in circuitry. Its potential applications span a range from L to F bands, encompassing data storage, communication systems, sensors, remote sensing and military uses.

A Dual-Polarity Graphene NEMS Switch ESD Protection Structure

A Study Of The Electrical And Mechanical Reliability Properties Of Suspended Graphene Nems Devices For Esd Protection Applications

Novel Nanophase-Switching ESD Protection

Analysis of 65 Nm Technology Grounded-Gate NMOS for On-Chip ESD Protection Applications

Electrothermal Characterization of Multilevel Cu-Graphene Heterogeneous Interconnects in the Presence of an Electrostatic Discharge (ESD)

Programmable On-Chip Esd Protection Using Nanocrystal Dots Mechanism And Structures

Dual-Direction Nanocrossbar Array Esd Protection Structures

Design Analysis of a Novel Low Triggering Voltage Dual Direction SCR ESD Device in 0. 18μm Mixed Mode RFCMOS Technology

RF NEMS switches based on graphene for low pull-in voltage and excellent RF performance

A Novel On-Chip Electrostatic Discharge Protection Design for Rf Ics

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Characterizing Phase Switching Structures for ESD Protection

A Novel Substrate-Optimized GGNMOS for Low-Voltage ESD Protection in 65 nm CMOS Process

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Ggnmos As Esd Protection in Different Nanometer Cmos Process

Graphene-based nonvolatile terahertz switch with asymmetric electrodes

ESD Circuits Design for High-Speed Analog CMOS Integrated Circuits

A novel gate-suppression technique for ESD protection.

Design and Analysis of an Area-Efficient High Holding Voltage ESD Protection Device

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology