Abstract:The development of optoelectronic devices based on flexible organic substrates substantially decreases the possible process temperatures during all stages of device manufacturing. This makes it urgent to search for new transparent conducting oxide (TCO) materials, cheaper than traditional indium-tin oxide (ITO), for the low-temperature deposition of transparent electrodes, a necessary component of most optoelectronic devices. The article presents the results of a vertically integrated study aimed at the low-temperature production of TCO thin films based on a zinc-indium oxide (ZIO) system with acceptable functional characteristics. First, dense and conducting ceramic targets based on the (100-x) mol% (ZnO) + x mol% (In2O3) system (x = 0.5, 1.5, 2.5, 5.0, and 10.0) were synthesized by the spark plasma sintering method. The dependences of the microstructure and phase composition of the ZIO ceramic targets on the In2O3 content have been studied by powder X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy methods. Then, a set of ZIO thin films with different Zn/In ratios were obtained on unheated glass substrates by direct current (dc) magnetron sputtering of the sintered targets. Complex studies of microstructure, electrical and optical properties of the deposited films have revealed the presence of an optimal doping level (5 mol% In2O3) of the ZIO target at which the deposited TCO films, in terms of the combination of their electrical and optical properties, become comparable to the widely used expensive ITO.

Deposition of IGZO or ITZO Thin Films by Co-Sputtering of IZO and GZO or ITO Targets

Structural, Electrical, and Optical Properties of ZnInO Alloy Thin Films

Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Fabrication and performance of indium oxide based transparent thin film transistors

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications

Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Development of Transparent Oxide Thin Films for Flexible Devices

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Transparent Conductive Indium Zinc Oxide Films Prepared by Pulsed Plasma Deposition

The ZnO-In2O3 Oxide System as a Material for Low-Temperature Deposition of Transparent Electrodes

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Realization of high transparent mobility zinc‐doped indium oxide (IZO) thin films by RF‐magnetron sputtering

Fabrication of an a-IGZO Thin Film Transistor Using Selective Deposition of Cobalt by the Self-Assembly Monolayer (SAM) Process

Characteristics of Zirconium-Doped Indium Tin Oxide Thin Films Deposited by Magnetron Sputtering

Low-roughness and easily-etched transparent conducting oxides with a stack structure of ITO and IZO

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Highly Transparent IGZO-TFTs Uses IGZO Source and Drain Electrodes with a Composite Insulation Layer Structure

Development of Novel Tungsten-Doped High Mobility Transparent Conductive In2O3 Thin Films

Electrical and optical properties of ITO and ITO:Zr transparent conducting films