Abstract:In this work, transparent amorphous InGaZnO (a-IGZO) thin films have been deposited on quartz glass substrates using RF magnetron sputtering at room temperature at the O-2 flow rate from 0 to 4 sccm. Electrical transport properties and optical transmittance of the a-IGZO films strongly depend on O-2/Ar flow rate ratio. Electrical conductivity of the a-IGZO films dramatically decreases from semiconducting to semi-insulating with increasing the O2 flow rate above 1 sccm. Optical transmittance of the a-IGZO films, however, has been improved up to 85% by increasing O-2 flow rate. Amorphous IGZO-based thin film transistors have been developed on indium-tin-oxide glass substrates with the phosphorus doped nanogranular SiO2 film of similar to 800 nm deposited by plasma-enhanced chemical vapor deposition at room temperature as the gate dielectric layer. The accumulation of protons at the IGZO/SiO2 interface induces a large electric-double-layer capacitance. Enhancement-mode IGZO/SiO2/ITO TFT devices with field effect mobility of 10.5 cm(2)/Vs and low threshold voltage of 0.7 V have been achieved. Furthermore, a-IGZO TFT devices exhibit subthreshold swing of 70 mV/dec and I-on/off of 1.5x10(6). Optical transmission spectra show that the a-IGZO thin film transistors arrays on glass substrates is highly transparent with optical transmittance above 80%.

Development of Transparent Oxide Thin Films for Flexible Devices

Modulation of Optical and Electrical Properties of Sputtering-Derived Amorphous Ingazno Thin Films by Oxygen Partial Pressure

Electrical Properties of Wide Bandgap ZnMgO and Fabrication of Transparent Thin Film Transistors

Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics

Study on the Structural, Electrical, Optical, Adhesive Properties and Stability of Ga-Doped Zno Transparent Conductive Films Deposited on Polymer Substrates at Room Temperature

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Amorphous zinc-doped indium oxide channel layers prepared by DC reactive magnetron sputtering

Research Advances of Electrical and Optical Properties of Transparent Conductive Oxide GZO Films

Amorphous InGaZnO Thin Film Transistors with Different Transparent Electrodes

Ga-concentration-dependent optical and electrical properties of Ga-doped ZnO thin films prepared by low-temperature atomic layer deposition

Optoelectronic Properties And The Electrical Stability Of Ga-Doped Zno Thin Films Prepared Via Radio Frequency Sputtering

Highly transparent and conductive Ga-doped ZnO films with good thermal stability prepared by dual-target reactive sputtering

Highly Transparent IGZO-TFTs Uses IGZO Source and Drain Electrodes with a Composite Insulation Layer Structure

Structure, Conductivity, and Transparency of Ga-Doped Zno Thin Films Arising from Thickness Contributions

Investigation of Optoelectronic Performance in In, Ga Co-Doped ZnO Thin Films with Various in and Ga Levels

Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering

Amorphous (in2o3)x(ga2o3)y(zno)1−x−y Thin Films with High Mobility Fabricated by Pulsed Laser Deposition

Performances Of Thin Film Transistors With Ga-Doped Zno Source And Drain Electrodes