Abstract:Microdevices prepared in a silicon substrate have been widely used in versatile fields due to the matured silicon-based microfabrication technique and the excellent physical properties of silicon material. However, the high thermal conductivity of silicon restricts its application in most thermal microdevices, especially devices comprising different temperature zones. In this work, a parylene-filled-trench technique was optimized to realize high-quality thermal isolation in silicon-based microdevices. Parylene C, a heat transfer barricading material, was deposited on parallel high-aspect-ratio trenches, which surrounded the isolated target zones. After removing the remnant silicon beneath the trenches by deep reactive ion etching from the back side, a high-quality heat transfer barrier was obtained. By using narrow trenches, only 5 mu m thick parylene was required for a complete filling, which facilitated multi-layer interconnection thereafter. The parylene filling performance inside the high-aspect-ratio trench was optimized by two approaches: multiple etch-deposition cycling and trench profile controlling. A 4 x 6 array, in which each unit was kept at a constant temperature and was well thermally isolated individually, was achieved on a silicon substrate by using the present parylene-filled-trench technique. The preliminary experimental results indicated that the present parylene-filled-trench structure exhibited excellent thermal isolation performance, with a very low power requirement of 0.134 mW (K mm(2))(-1) for heating the isolated silicon unit and a high thermal isolation efficiency of 72.5% between two adjacent units. Accompanied with high-quality isolation performance, the microdevices embedded the present parylene-filled-trench structure to retain a strong mechanical connection larger than 400 kPa between two isolated zones, which is very important for a high-reliability-required micro-electro-mechanical-system (MEMS) device. Considering its room-temperature processing essence, the present parylene-filled-trench technique is believed to be a promising isolation method in the post-complementary metal oxide semiconductor MEMS integration.

Challenges and Solutions for Fabricating Isolation Trenches for High Aspect Ratio Sensors

Fabrication Challenges and Test Structures for High-Aspect-ratio SOI MEMS Devices with Refilled Electrical Isolation Trenches

Investigation Of Fabricating Ultra Deep And High Aspect Ratio Electrical Isolation Trench Without Void

Compact Electrode Design for an In-Plane Accelerometer on SOI with Refilled Isolation Trench

Fabrication of keyhole-free ultra-deep high-aspect-ratio isolation trench and its applications

A single-mask dry-release process for fabrication of high aspect ratio SOI MEMS devices

Post-CMOS Process for High-Aspect-ratio Monolithically Integrated Single Crystal Silicon Microstructures

A CMOS Compatible Process for Monolithic Integration of High-Aspect-ratio Bulk Silicon Microstructures

Compact electrode design for in-plane accelerometer on SOI with refilled isolation trench

Fabrication of ultra-deep high-aspect-ratio isolation trench without void and its application

Fabrication of SOI MEMS Inertial Sensors with Dry Releasing Process

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill

Modeling and Measurement of A Novel Shielding Design in Silicon Interposer

Fabrication, Characterization And Failure Analysis Of A Novel Mems Tunneling Accelerometer

A Parylene-Filled-Trench Technique for Thermal Isolation in Silicon-Based Microdevices

A Single Mask Dry Releasing Process for Making High Aspect Ratio Soimemsdevices.

Integrated bulk-micromachined gyroscope using deep trench isolation technology

Heterogeneous Integration of MEMS Sensor Array and CMOS Readout IC with Through Silicon Via Interconnects

Sensing Characteristic Enhancement of CMOS-Based ISFETs With Three-Dimensional Extended- Gate Architecture

12 inch MEMS process for sensors implementation and integration