Fabrication, Characterization And Failure Analysis Of A Novel Mems Tunneling Accelerometer

Hf Dong,Yl Hao,Yb Jia,Sm Shen,Wd Zhang

2004-01-01

Abstract:In order to fabricate tunneling accelerometer using inductively coupled plasma(ICP) technology, which can produce high aspect ratio silicon structure, the authors design and fabricate a tunneling accelerometer based on Silicon-Glass Anodic-bonding and Deep Etching Releasing of Peking University. The tunneling current of open loop is tested in the air by HP4145B semiconductor analyzer, which verify the presence of tunneling current and the exponential relationship between tunneling gap and tunneling current. The tunneling barrier is extrapolated to be from 1.5 to 2.2. The goal of this paper is to outline the fabrication process and the measurement results, which are necessary to verify that the sensor is actually tunneling, and provide important data, such as the threshold voltage, barrier height and product of spring constant and the original distance between the tip and the counter electrode, for the later controller design. The close loop test and measurement were performed and the result shows linearity smaller than 1% in the range of 0-1g. Finally, the reason for the sensitivity variation and failure are analyzed.