Design, fabrication and testing of a SOI accelerometer

Yumin Wei,Xu Mao,Zhenchuan Yang,Guizhen Yan
2012-01-01
Abstract:A SOI accelerometer is designed, fabricated and tested. The SOI wafer was etched from backside to form cavity by KOH solution and HF solution, respectively. A thin aluminium film was sputtered at the backside of cavity to conduct the heat and charges formed by the plasma in the DRIE process, so footing effect can be suppressed. The accelerometer was tested, the nonlinearity, resolution at ±1 g and 3dB frequency in the air are 2.91‰, 0.75 mg and 1.26 kHz respectively. The temperature coefficient of sensitivity is +257 ppm/°C to -222 ppm/°C(-40°C~85°C). The test results show that the accelerometer has good nonlinearity and temperature coefficient of sensitivity.
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