SOI Micro-Accelerometer Fabricated with Anti-Footing Technique

MAO Xu,YANG Zhen-chuan,LI Zhi-hong,YAN Gui-zhen
DOI: https://doi.org/10.3969/j.issn.1672-6030.2010.04.009
2010-01-01
Abstract:To deal with the Footing effect in deep etching of silicon on insulator(SOI) materials,a modified anti-Footing technique using backside protecting electrode based on backside-releasing SOI micro electro mechanical system(MEMS) process was proposed and implemented.SiO2 and Si3N4 were deposited on SOI wafer and patterned to be used as etching mask,and then the handle wafer was etched from backside to the buried oxide SiO2.After the buried oxide SiO2 was removed from backside,aluminum films were sputtered on the frontside for interconnection and in the cavity to prevent Footing effect.SOI wafer was etched with deep reactive ion etching(DRIE) and a structure layer was obtained,which was then released through etching of the thin Al film on the backside.Based on the proposed process,an SOI micro-accelerometer with double clamped beams and with the thickness of structure layer of 80 μm was designed,simulated,fabricated and its performance was tested.The scale factor and nonlinearity of the fabricated accelerometer were measured to be 106.7 mV/g(g =9.8 m/s2) and 0.1% from-1 g to 1 g,respectively.Testing results indicate that the modified technique can effectively prevent the device from damage of Footing effect,hence improving the reliability of the fabrication process.
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