Fabrication of a MEMS Capacitive Accelerometer with Symmetrical Double-Sided Serpentine Beam-Mass Structure

Xiaofeng Zhou,Lufeng Che,Youling Lin,Xiaolin Li,Jian Wu,Yuelin Wang
DOI: https://doi.org/10.1007/s00542-013-1911-z
2013-01-01
Microsystem Technologies
Abstract:This paper presents a symmetrical double-sided serpentine beam-mass structure design with a convenient and precise process of manufacturing MEMS accelerometers. The symmetrical double-sided serpentine beam-mass structure is fabricated from a single double-device-layer SOI wafer, which has identical buried oxides and device layers on both sides of a thick handle layer. The fabrication process produced proof mass with though wafer thickness (860 μm) to enable formation of a larger proof mass. Two layers of single crystal silicon serpentine beams with highly controllable dimension suspend the proof mass from both sides. A sandwich differential capacitive accelerometer based on symmetrical double-sided serpentine beams-mass structure is fabricated by three layer silicon/silicon wafer direct bonding. The resonance frequency of the accelerometer is measured in open loop system by a network analyzer. The quality factor and the resonant frequency are 14 and 724 Hz, respectively. The differential capacitance sensitivity of the fabricated accelerometer is 15 pF/g. The sensitivity of the device with close loop interface circuit is 2 V/g, and the nonlinearity is 0.6 % over the range of 0–1 g. The measured input referred noise floor of accelerometer with interface circuit is 2 μg /√ Hz (0–250 Hz).
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