Abstract:In this paper, double-clamped beam with a mass at the center has been fabricated on substrate of a Silicon-on-Insulator (SOI) wafer. Thin layer SOI Field-Effect Transistors (SOI-FETs) have been integrated at ends of the beam on top layer of the SOI wafer, which can be used for stress-sensing. Such a structure can be used as an accelerometer. The applied acceleration can be detected directly by the changing of the drain current. The measured sensitivity and noise floor of the device are 0.91 mV/g and 13 mg/Hz(-1/2). As expected performance of the SOI-FETs, such an accelerometer can be used in a wide temperature range (-60 degrees C to 200 degrees C) in some special applications, such as military, automobile, nuclear and well-logging industry application.Note to Practitioners-This paper describes the method for stress-sensing using the thin layer Silicon-on-Insulator Field-Effect Transistors (SOI-FETs). This method is characterized with adjustable sensitivity and wide working temperature range and is expected to apply in strain gauges, pressure sensors, accelerometers, and cantilever force/displacement sensors. In the paper we take the application in accelerometers for example. A structure of double-clamped beam with a mass at the center has been fabricated on the substrate of a SOI wafer. Based on the devices, we have measured the characteristics of the sensitivity, the noise floor and the working temperature, which is critical in some applications such as military, automobile, nuclear, and well-logging industry application.

A novel sandwich capacitive accelerometer with a symmetrical structure fabricated from a D-SOI wafer

A Novel Sandwich Capacitive Accelerometer with A Double-Sided 16-Beam-mass Structure

A Novel Capacitive Accelerometer with A Highly Symmetrical Double-Sided Beam-Mass Structure

Design and Fabrication of a Micro-Electromechanical System Sandwich Capacitive Accelerometer

An In-Plane Low-Noise Accelerometer Fabricated with an Improved Process Flow

A novel capacitive accelerometer with an eight-beam-mass structure by self-stop anisotropic etching of (1 0 0) silicon

Fabrication of a MEMS Capacitive Accelerometer with Symmetrical Double-Sided Serpentine Beam-Mass Structure

Monolithic Integrated Cavity Optomechanical Accelerometer Based on Push-Pull Photonic Crystal Zipper Cavity

A Novel Z-Axis Capacitance Accelerometer with Highly Symmetrical 16-Beam Structure

Design and Fabrication of a Mems Capacitive Accelerometer Based on Double-Device-layers SOI Wafer.

A New Symmetrical Beam-Mass Structure for Accelerometers by Anisotropic Etching Without Convex Corner Compensation

Monolithic Integrated Micro-Opto-Electromechanical Accelerometer Based on Michelson Interferometer Structure

Thin Layer Soi-Fets Used for Stress-Sensing and Its Application in Accelerometers

A MEMS Sandwich Differential Capacitive Silicon-on-insulator Accelerometer

Design of a Novel Low Cross-Axis Sensitivity Micro-Gravity Sandwich Capacitance Accelerometer.

A novel SOI-based single proof-mass 3-axis accelerometer with gap-closing differential capacitive electrodes in all sensing directions

A Novel Soi Z-axis Accelerometer with Gap Closing Differential Sensing Electrodes

Design and Fabrication of a Highly Symmetrical Capacitive Triaxial Accelerometer

A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding

A Fully Symmetrical Capacitive Accelerometer with Precisely Controllable Capacitor Gap

A novel out-of-plane MEMS tunneling accelerometer