Abstract:Conformal chemical vapor deposition (CVD) of silicon carbide (SiC) from methyltrichlorosilane (MTS) and hydrogen (H2) onto high-aspect-ratio (HAR; typically >100:1) three-dimensional features has been a challenge in the fabrication of ceramic matrix composites. In this study, the impact of heterogeneous underlayers on the initial nucleation of SiC-CVD was studied using HAR (1000:1) microchannels with a tailored wetting underlayer of Si(100) and dewetting underlayers of thermally formed amorphous silicon dioxide (a-SiO2) and turbostratic boron nitride (t-BN). Incubation periods were distributed in the microchannels on a-SiO2 and t-BN underlayers, with the longest period of 70 min found at the feature-bottom due to a decreased concentration (C) of film-forming species. The longer incubation periods with more dewetting underlayers arose due to demoted initial nucleation. Prolonged incubation at the feature bottom led to poor conformality because thick films had already formed at the inlet when film formation began at the feature bottom. The incubation periods were eliminated by increasing the supply of MTS/H2, in accordance with classical heterogeneous nucleation theory. In the meantime, carbon-rich SiC films formed in the vicinity of dewetting a-SiO2 and t-BN underlayers at the feature bottoms, with greater carbon segregation on more dewetting underlayers. This was probably due to the deposition of pyrocarbons (CH4, C2H2, and/or C2H4) generated from MTS/H2 in the gas phase. Decreasing the temperature (T) from 1000 to 900 °C prevented carbon-rich film formation, and the expected deposition rate of pyrocarbon decreased to 0.6% for the case of CH4. A higher C of MTS/H2 combined with a lower T enabled conformal and stoichiometric film formation on the heterogeneous HAR features.

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The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

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Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Effects of Ethylene doping on Deposition Rate and Surface Profile of Silicon Films

The Effect of Hydrogen Species on the Electronic Properties of Nc-Si:H Prepared in A Triode Pecvd System

Effect of C/Si Ratio on the Characteristics of 3C-Sic Films Deposited on Si(100) Base on the Four-Step Non-Cooling Process

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Growth of 4H-Sic on AlN/Si(100) Complex Substrate by Chemical Vapor Deposition

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

A comparative study of SiC epitaxial growth in vertical hotwall CVD reactor using silane and dichlorosilane precursor gases

Role of H2 and Ar as the diluent gas in continuous hot-wire CVD synthesis of SiC fiber

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Conformal and Stoichiometric Chemical Vapor Deposition of Silicon Carbide onto Ultradeep Heterogeneous Micropores by Controlling the Initial Nucleation Stage

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

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Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films

Process Optimization for Homoepitaxial Growth of Thick 4H-Sic Films Via Hydrogen Chloride Chemical Vapor Deposition