Abstract:In this paper, the operation mechanism of trench termination is investigated through 2-D numeric simulation on Silvaco. It is found that in trench termination, the electric field is terminated by the accumulated holes at the outer trench sidewall. In order to ensure a high termination breakdown voltage, the trench is refilled with a combination of SiO<sub>2</sub> and polyimide (PI). Through various 2-D numerical simulations, the impact of structural parameters on breakdown voltage has been discussed, namely, trench depth (TD), trench width (TW), and sidewall tilt angle. The 3-D simulations are also conducted to investigate the effect of round corner radius on the device breakdown voltage and electric field in the dielectrics. Based on these results, the trench termination is designed and then fabricated along with a p-i-n diode. The measurement results show that a $14~mu text{m}$ wide trench is sufficient to terminate a voltage of 1750V (>96% of the ideal planar breakdown). Comparing with conventional field limiting rings junction termination extension (FLR/JTE) technology, this trench termination can significantly reduce the termination length by a factor of 4. As a result, the area efficiency is largely improved from 62% to around 90% for a 2A device conducting at 1000 A/cm<sup>2</sup>. These results indicate that the SiC device price can be substantially lowered with such an area-efficient trench termination technology. Furthermore, the 168-h high-temperature reverse bias (HTRB) test under 1200 V and 175 °C shows the potential of this trench termination for long-term reliable operation. Finally, unclamped inductive switching (UIS) tests have been conducted on fabricated devices. Compared to commercial SiC junction barrier Schottky diodes with FLR, fabricated p-i-n diodes with trench termination -how significant higher avalanche capability.

1.4 Kv 4H-Sic PiN Diode with a Robust Non-Uniform Floating Guard Ring Termination

Design, Fabrication and Characterization of Mesa Combined with JTE Termination for High-Voltage 4h–sic PiN Diodes

Development of 10 Kv 4H-Sic JBS Diode with FGR Termination

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

Simulation, Fabrication and Characterization of 4500v 4H-Sic Jbs Diode

Evaluation of Termination Techniques for 4H-Sic Pin Diodes and Trench JFETs

Development Of 3.6 Kv 4h-Sic Pin Power Diodes

Trench Termination with SiO2-Encapsulated Dielectric for Near-Ideal Breakdown Voltage in 4H-Sic Devices

Design and Fabrication of 1.92 Kv 4H-Sic Super-Junction SBD with Wide-Trench Termination

4 700V SiC PiN Rectifier

4.5kV SiC JBS diodes

Etched Junction Termination Extension With Floating Guard Rings And Middle Rings For Ultrahigh-Voltage 4h-Sic Pin Diodes

Design and Characterization of Area-Efficient Trench Termination for 4H-SiC Devices

4.15 Kv / 4.6 Mω·cm2 4H-Sic Epi-refilled Super-Junction Schottky Diode with Ring Assisted Super-Junction Termination Extension

A Robust and Area-Efficient Guard Ring Edge Termination Technique for 4H-Sic Power MOSFETs

Simulation, fabrication and characterization of 6500V 4H-SiC JBS diode

Design and Experimental Study of 1.2kV 4H-SiC Merged PiN Schottky Diode

A Near Ideal Edge Termination Technique for Ultrahigh-Voltage 4H-Sic Devices with Multi-Zone Gradient Field Limiting Ring

High-Voltage Large-Current 4H-SiC JBS Diodes

Study on 2000V SiC JBS Diodes

1.4 3 Kv 4H-Sic Lateral Junction Barrier Schottky Diode with High BFOM (390 MW/cm2)