Abstract:We demonstrated flexible amorphous In–Ga–Zn–O (a-IGZO) thin-film transistors (TFTs) on fully transparent and high-temperature polyimide-based nanocomposite substrates. The flexible nanocomposite substrates were coated on the carrier glass substrates and were debonded after the TFT microfabrication. The adoption of the Ti/IZO stacked electrodes as source/drain/gain electrodes significantly improved the etching compatibility with other material layers, enabling successful implementation of flexible a-IGZO TFTs onto the transparent nanocomposite substrates by conventional lithographic and etching processes. The flexible a-IGZO TFTs exhibited decent mobility and mechanical bending capability. Field-effect mobility of up to 15.9 $\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$, a subthreshold swing of 0.4 V/dec, a threshold voltage of 0.8 V, and an on/off ratio of $>\hbox{10}^{8}$ were extracted from the TFT characteristics. The devices could be bent down to a radius of curvature of 3 mm and yet remained normally functional. Such successful demonstration of flexible oxide TFTs on transparent flexible substrates using fully lithographic and etching processes that are compatible with existing TFT fabrication technologies shall broaden their uses in flexible displays and electronics.

16.2: A 4.8‐inch AMOLED Display Panel Driven by Stable Amorphous In‐Zn‐O Thin‐Film Transistor

P‐1.8: High Performance Amorphous IZO/IGZO Bilayer Thin Film Transistors for Ink‐jet Printed AMOLED Displays

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display

31-Inch 4K Flexible Display Employing Gate Driver With Metal Oxide Thin-Film Transistors

Oxide-Semiconductor-Based TFTs for Displays and Flexible Electronics

Oxide TFT with multilayer gate insulator for backplane of AMOLED device

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

A High-Reliability Gate Driver Integrated in Flexible AMOLED Display by IZO TFTs

P-5.2: A gate driver circuit with a-IGZO TFTs for a 15-inch AMOLED display

Highly robust oxide TFT with bulk accumulation and source/drain/active layer splitting

Tft Backplane Based On Amorphous Oxide Semiconductor

Robust Gate Driver on Array Based on Amorphous IGZO Thin-Film Transistor for Large Size High-Resolution Liquid Crystal Displays

High Performance Indium‐Gallium‐Zinc Oxide Thin Film Transistor via Interface Engineering

High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates

P‐19: High Mobility and Reliability Oxide Stacked TFT for Application to Next Generation Display

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Amorphous IGZO TFT with High Mobility of ~70 cm2/Vs via Vertical Dimension Control using PEALD.

P‐1.14: an A‐igzo TFT AMOLED Pixel Circuit with Source Follower Structure to Alleviate Hysteresis Effect

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Investigation On Amoled Based On Zno:In:Nd Thin Film Transistors

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels