Abstract:The group-Ⅲ nitrides and their related ternary alloys have been becoming the most attractive material for light emitting diodes (LEDs) and laser diodes (LDs) in the UV and blue spectral range. However, the origins of the yellow luminescence (YL), which is commonly observed in almost undoped and n-type GaN, remain unclear. The nature and the role of initial nitridation of sapphire surface and the generation of threading dislocation (TD) are ambiguous too. It is a possible way to resolve the above problems by studying the microstructures and optical properties combining the growth conditions. In this work, two kinds of GaN films were grown by MOCVD under different initial nitridation time (180 seconds for Sample A, and 90s for Sample B). The growth temperature is about 950℃. The cross-sectional transmission electron microscope (TEM) is performed near the GaN/sapphire interface. Corresponding the growth processes, there are three zones in the GaN layer: buffer layer, zone and sound zone. There are haystack-like domains in the faulted zone, in which there are high density of extended defects. The thickness of the faulted zone is about 0.4μm. Just above this region, the defects density is reduced sharply, and the quality of the layer is improved, which is identified by electron diffraction (ED) patterns. In comparison, Sample A shows about an order lower density of extended defects than Sample B, their columnar diameter is larger and its ED pattern is sharper, too. The buffer layer of Sample B is more smooth than Sample A. The appropriate rougher morphology of the buffer layer may cause that the structural disorder between the high-temperature (HT) grown island and the buffer layer is accommodated by Frank and Shockley partial dislocations. However, the TD is likely to propagate into the HT GaN from the smooth surface of the buffer layer grown after extensively nitridation of substrate. According to the position and width of X-ray diffraction peaks of (0002) and (0004), the size of crystalline grain, D and the residual strain could be calculated. The values of(D,e in)of Sample A and B are (175nm,0.167%) and (90nm,0.141%), respectively. Small size of crystalline grain may be advantageous to relieve the lattice and thermal mismatch stress, but it lead to higher density of extended defects. The width of GaN (0002) reflections of Sample A is 4min lower than that of Sample B. This result may be due to the lower screw TD. The higher density of screw TD may widen the GaN (0002) peak in X-ray rocking curve. In room temperature PL spectra, the ratio of band-edge emission intensity to YL one of Sample A is 3 orders larger than that of Sample B. Furthermore the YL in Sample B is stronger and has fine structure, while that in Sample A is nearly invisible in the PL spectrum. The GaN epilayer with high quality exhibits almost no YL emission. It is well known that the YL corresponds to the deformed crystal structure. We assigned that the screw TD and mixed TD are attributed to the YL referring to our XRD results.

Correlation of In-Situ Reflectance Spectra and Resistivity of GaN/Al 2 O 3 Interfacial Layer in Metalorganic Chemical Vapor Deposition

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Al diffusion in GaN buffer layer during the growth of GaN film

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Ultrathin GaN film and AlGaN/GaN heterostructure grown on thick AlN buffer by MOCVD

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

The role of AlN thickness in MOCVD growth of N-polar GaN

Microstructure analysis on buffer layer in GaN/MgAl2O4

Structural Characterization of AlGaN/AlN Bragg Reflector Grown by Metalorganic Chemical Vapor Deposition

Gan Grown on Ain/Sapphire Templates

Study of moiré fringes at the interface of GaN/α-Al2O3 (0001)

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Study of moiré fringes at the interface of GaN/α-Al2O3 (0 0 0 1)

The Dependence of Growth Rate of GaN Buffer Layer on Growth Parameters by Metalorganic Vapor-Phase Epitaxy

Unintentional gallium incorporation in AlN and its impact on the electrical properties of GaN/AlN and GaN/AlN/AlGaN heterostructures

Microstructural and Optical Properties of GaN Films on Nitrided Sapphire Substrates