Abstract:The Si–C–H thin films were deposited at 300°C by plasma enhanced chemical vapor deposition (PECVD) and around 600°C by pyrolysis CVD, in which C2H4 and SiH4 were used as the resource gases and hydrogen as the carrying vehicle. The formation of micro-crystals in the Si–C–H films was investigated by TEM, IR spectroscopy and electrical resistivity measurements. The results show that many silicon nano-crystalline particles are embedded and distributed uniformly in the amorphous matrix of the Si–C–H thin film. A higher content of C2H4 results in a lower crystallinity of the film deposited both by PECVD and pyrolysis CVD. The crystal grows more easily in the film deposited with C2H4–SiH4 at high temperature around 600°C by pyrolysis CVD than that deposited at 300°C by PECVD. The resistivity of the film by pyrolysis CVD at high deposition temperature is about five orders of magnitude lower than that by PECVD at low deposition temperature. The SiC crystalline phase trends to form quite possibly in the Si–C–H thin film deposited at 630°C by pyrolysis CVD. The expressions of the crystallinity and resistivity as functions of the content of C2H4 are theoretically deduced. The theoretical curves are showed to be very coincident with the experimental results in the Si–C–H thin film. The crystallinity of the film rests mainly with the nucleation rate of silicon phase that is dependent on the content of C2H4 in deposition source gases. The resistivity behavior of Si–C–H thin film matches with the parallel model of the two phase events, where the contribution of crystalline phase is appropriate to the contact probability among the silicon crystals and compatible with homogeneous distribution of the particles embedded in matrix.

Effect of Deposition Temperature on Dynamics and Mechanism of Deposition for Si–B–C Ceramic from BCl3/SiCH3Cl3/H2 Precursor

The effect of deposition temperature of BN interphase on the tensile properties of SiC fibers

High-throughput thermodynamic analysis of the CVD of SiC from the SiCl4-CH4-H2 system

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Low temperature synthesis and formation mechanism of dense SiC coating layer by fluidized bed chemical vapor deposition

The structure of chemical vapor deposited silicon carbide

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Comparative study on the microstructure evolution and crystallization behavior of precursor-derived and mechanical alloying derived SiBCN

Effect of deposition temperature on the corrosion behavior of CVD SiC coatings on SiCf/SiC composites under simulated PWR conditions

Effects of Zr on the Precursor Architecture and High-Temperature Nanostructure Evolution of Sioc Polymer-Derived Ceramics

Synthesis of boron carbide films by ion beam sputtering

Effects of Molding Temperature on Properties of Porous SiC Ceramics

Transition Between Amorphous and Crystalline Phases of SiC Deposited on Si Substrate Using H3SiCH3

Effect of temperature on preparation of β-sialon/SiC composite ceramics powder made from coal-mine schist

Effect of B2O3 Addition on Low-temperature Sintering Behavior and Properties of SiC/h-BN Multiphase Ceramics

Effect of temperature-dependent nano SiC on the ablation resistance of ZrC coating

Effects of Carbon Additions on Crystallinity and Resistivity in Si–C–H Thin Films Deposited by CVDs

Pseudo low-temperature sintering effect and microstructure evolution of SiBCO ceramics

Effect of SiC on Microstructure, Phase Evolution, and Mechanical Properties of Spark-Plasma-Sintered High-Entropy Ceramic Composite

Molecular-Level Processing of Si-(B)-C Materials with Tailored Nano/Microstructures

Polyborosilazane‐Derived High Temperature Resistant SiBCNO