Abstract:The in‐line ozone‐gas oxidation (OGO) method can produce tunnel SiOx contains lower Dit within Ev—(0.15–0.40) eV thanks to less low‐valent silicon oxides brought by the more prominent oxidation ability compared with the in‐line plasma‐assisted N2O oxidation (PANO) method. Consequently, the n‐type TOPCon silicon solar cells with OGO SiOx possess better performance than their counterpart. Nowadays, a stack of heavily doped polysilicon (poly‐Si) and tunnel oxide (SiOx) is widely employed to improve the passivation performance in n‐type tunnel oxide passivated contact (TOPCon) silicon solar cells. In this case, it is critical to develop an in‐line advanced fabrication process capable of producing high‐quality tunnel SiOx. Herein, an in‐line ozone‐gas oxidation (OGO) process to prepare the tunnel SiOx is proposed to be applied in n‐type TOPCon solar cell fabrication, which has obtained better performance compared with previously reported in‐line plasma‐assisted N2O oxidation (PANO) process. In order to explore the underlying mechanism, the electrical properties of the OGO and PANO tunnel SiOx are analyzed by deep‐level transient spectroscopy technology. Notably, continuous interface states in the band gap are detected for OGO tunnel SiOx, with the interface state densities (Dit) of 1.2 × 1012–3.6 × 1012 cm−2 eV−1 distributed in Ev + (0.15–0.40) eV, which is significantly lower than PANO tunnel SiOx. Furthermore, X‐ray photoelectron spectroscopy analysis indicate that the percentage of SiO2 (Si4+) in OGO tunnel SiOx is higher than which in PANO tunnel SiOx. Therefore, we ascribe the lower Dit to the good inhibitory effects on the formation of low‐valent silicon oxides during the OGO process. In a nutshell, OGO tunnel SiOx has a great potential to be applied in n‐type TOPCon silicon solar cell, which may be available for global photovoltaics industry.

Influence of Composite Oxidation on Electron Emission Characteristics of Thick Porous Silicon

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

The Influence Of Chemical Oxidation On Surface State And Photoluminescence Of Porous Silicon

Industrial High Throughput Emitter Formation and Thermal Oxidation for Silicon Solar Cells by the High Temperature Stack Oxidation Approach

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Investigation of the Oxidation Effect of Porous Silicon During Electroluminescence by in Situ FTIR

Photoluminescence of oxidized porous silicon under UV-light illumination

Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

Effect of post-treatment processes on the photoluminescence of porous silicon

Microstructure, Heat Treatment, and Oxidation Study of Porous Silicon Formed on Moderately Doped P-Type Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

Enhancing Internal Electric Field of 3D Porous Chitosan-Pdi Polymer with Donor-Acceptor Structure for Efficient Photocatalytic Advanced Oxidation

Improved cold emission property of the multilayer porous silicon by modulating the porosity sequence

Effect of Laser Illumination on Oxidization of Porous Silicon

Microstructure and oxidation of porous silicon

Passivation of Porous Silicon by Wet Thermal Oxidation

Oxidation effects on graded porous silicon anti-reflection coatings

Effect of plasma-assisted N 2 O/Ar oxidation on TOPCon solar cells

Enhanced Passivation Effect of Tunnel Oxide Prepared by Ozone‐Gas Oxidation (OGO) for n‐Type Polysilicon Passivated Contact (TOPCon) Solar Cells

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation