Abstract:In the quest for ultra-high-efficiency silicon solar cells, optimising surface passivation has emerged as a critical pathway to minimise losses and enhance device performance. Recent breakthroughs in aluminium oxide (AlO x ) passivation show an interface to Si with low interface defect density and high negative charge density after activation annealing at 400–450 °C, enabling low surface recombination velocities. The formation of an interfacial SiO x layer has been recognised as a key factor. In this study, we present an in-depth investigation of a SiO x /AlO x /SiN x nanolayer stack interface with Si, where the SiO x is wet chemically grown. By varying the AlO x deposition from 5 to 40 ALD cycles, we observed a reduction in interface defect density, indicating the presence of negatively charged hydrogen in the AlO x layer. We reveal a distinctly different interface between Si and nanolayer stacks with or without AlO x . Activation annealing significantly reduced recombination losses for stacks with AlO x , attributed to increased charge density and decreased carrier capture velocity at the valence band-tail. We find lower electron capture rates in nanolayer stacks containing AlO x , suggesting effective passivation of donor states by negatively charged hydrogen. Additionally, the formation of new acceptor states was detected by an increase in hole capture velocity at the interface after annealing. Electron energy loss spectroscopy (EELS) identified an Al:SiO x N y layer of ∼2.5 nm thick with excess oxygen content and a mixture of tetrahedral and octahedral coordinated Al, likely contributing to the formation of acceptor defects and suggest an intrinsic link between the chemical and field-effect passivation.

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Ultrathin Aluminum Oxide Films Induced by Rapid Thermal Annealing for Effective Silicon Surface Passivation

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Improving Silicon Surface Passivation with a Silicon Oxide Layer Grown via Ozonated Deionized Water

Wet-Chemically Grown Interfacial Oxide for Passivating Contacts Fabricated With an Industrial Inline Processing System

Passivation of Porous Silicon by Wet Thermal Oxidation

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

Exclusively Gas-Phase Passivation of Native Oxide-Free Silicon(100) and Silicon(111) Surfaces

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Preoxidation UV Treatment of Silicon Wafers

Temperature-induced stoichiometric changes in thermally grown interfacial oxide in tunnel-oxide passivating contacts

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Improvement of electro-physical properties of ultra-thin PECVD silicon oxynitride layers by high-temperature annealing

UV-Ozone Oxide layer for Junction Passivation and Passivating Contact Process of Silicon Solar Cells

AN INTERFACE KINETICS STUDY OF OXIDATION PROCESS OF SILICON

Oxide-nitride nanolayer stacks for enhanced passivation of p-type surfaces in silicon solar cells

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Repair of thin thermally grown silicon dioxide by anodic oxidation

Impact of PECVD SiON stoichiometry and post-annealing on the silicon surface passivation