Microstructures and Emission Characteristics of Porous Silicon Films
Wen Luo,Wenbo Hu,Yu Zheng,Zhongxiao Song,Huiyan Wu
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.01.07
2012-01-01
Abstract:The microstructures of the porous silicon (PS) film, fabricated on n-type silicon wafer by electrochemical etching, were characterized with field emission scanning electron microscopy (FE-SEM). The impacts of the etching conditions, including the doping levels of the Si wafer, etching current density and time, on the porous Si films were studied. The results show that the doping levels of Si wafer strongly affect the film's porosity. For the lightly-doped (n --type) Si, deepand wide pores were observed; in contrast, for the heavily-doped (n +-type) Si, high density of dendritic-structured pores was found. At a fixed etching current density, the PS film thickness was proportional to the etching time; and large etching current reduced its compactness. The emission threshold-voltage of the prototyped cold cathode, made of the PS films, was found to be 14 V. Moreover, low pressure little affected the emission current, even at 0.1 Pa.