Abstract:High-efficiency silicon solar cells rely on some form of passivating contact structure to reduce recombination losses at the crystalline silicon surface and losses at the metal/Si contact interface. One such structure is polycrystalline silicon (poly-Si) on oxide, where heavily doped poly-Si is deposited on a SiOx layer grown directly on the crystalline silicon (c-Si) wafer. Depending on the thickness of the SiOx layer, the charge carriers can cross this layer by tunneling (<2 nm SiOx thickness) or by direct conduction through disruptions in the SiOx, often referred to as pinholes, in thicker SiOx layers (>2 nm). In this work, we study structures with tunneling- or pinhole-like SiOx contacts grown on pyramidally textured c-Si wafers and expose variations in the SiOx layer properties related to surface morphology using electron-beam-induced current (EBIC) imaging. Using EBIC, we identify and mark regions with potential pinholes in the SiOx layer. We further perform high-resolution transmission electron microscopy on the same areas, thus allowing us to directly correlate locally enhanced carrier collection with variations in the structure of the SiOx layer. Our results show that the pinholes in the SiOx layer preferentially form in different locations based on the annealing conditions used to form the device. With greater understanding of these processes and by controlling the surface texture geometry, there is potential to control the size and spatial distribution of oxide disruptions in silicon solar cells with poly-Si on oxide-type contacts; usually, this is a random phenomenon on polished or planar surfaces. Such control will enable us to consistently produce high-efficiency devices with low recombination currents and low junction resistances using this contact structure.

Study of Porous Silicon Layer Effect in Optoelectronics Properties of Multi-Crystalline Silicon for Photovoltaic Applications

Study of porous silicon layer effect in optoelectronics properties of crystalline silicon

Characterization of nanoporous silicon layer to reduce the optical losses of crystalline silicon solar cells

Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Preparation Of Porous Silicon By Electrochemical Etching Methods And Its Morphological And Optical Properties

Investigations on the Influence of Surface Textures on Optical Reflectance of Multi-crystalline Silicone (MC-Si) Crystal Surfaces-Simulations and Experiments

Progress towards silicon optoelectronics using porous silicon technology

Novel silicon surface passivation by porous silicon combined with an ultrathin Al2O3 film

Effect of a Back-Surface Field and Passivation Layer on a Silicon Schottky Solar Cell

Study of Black Silicon Wafer through Wet Chemical Etching for Parametric Optimization in Enhancing Solar Cell Performance by PC1D Numerical Simulation

Development of the Monolayer Silicon Solar Cell Based on Photonic Crystals

On the Question of the Possibility of Using Nanocrystalline Porous Silicon in Silicon-Based Solar Cells

Highly effective passivation of crystalline silicon surfaces achieved through transparent conductive Al-doped ZnO layers

The Effect of Different Wavelengths on Porous Silicon Formation Process

Optoelectric Characteristics of Porous Silicon Using A Conducting Polymer

Significant advancements in passivating crystalline silicon surfaces achieved through the implementation of metal-doped zinc oxide layers

Performance enhancement of a proposed solar cell microstructure based on heavily doped silicon wafers

Numerical Investigation of Thermodynamic Properties in 2D Porous Silicon Photonic Crystals Integrated in Thermophotovoltaic Energy Conversion System

Effect of Surface Texture on Pinhole Formation in SiO x-Based Passivated Contacts for High-Performance Silicon Solar Cells