On the Question of the Possibility of Using Nanocrystalline Porous Silicon in Silicon-Based Solar Cells

Rotshteyn, V. M.
DOI: https://doi.org/10.3103/S0003701X21060153
2022-07-21
Applied Solar Energy (English translation of Geliotekhnika)
Abstract:The method used to obtain nanocrystalline porous silicon by electrochemical etching is described in detail, with a description of the cell itself with a reduction of its scheme and electrolyte composition. The main parameters of the process optimized for the mode of generation of nanocrystalline porous silicon with specified characteristics are presented. The results of ellipsometric studies of nanostructured porous silicon to determine the dependence of the layer thickness on the density of the applied current, are given, which showed linear dependence of the thickness of the nanostructured porous silicon layer on its etching time. The results of analytical studies of samples of nanocrystalline porous silicon obtained using the Renishaw InVia Raman spectrometer, which allows recording and identifying both amorphous and crystalline phase components in the studied samples, are described in detail. The advantages of nanocrystalline porous silicon due to its inherent quantum-size effects are presented, which demonstrate the possibility of its use in microelectronics and silicon-based solar photovoltaic converters, as a wide-gap material with photoluminescence properties, as an antireflection coating due to the developed surface, and the layer of secondary radiation for increasing the efficiency of single-crystal and polycrystalline silicon photovoltaic converters, as well as simplifying the development of multilayer heterojunction solar panels based on crystalline silicon.
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