Abstract:A gas inlet channel is established to model the inflow of the inert gas (95% Ar) and dopant gas (5% N2), and a gas outlet channel to model the outflow of the gas species. The joint that allows exchanges of the gas species is modeled as a thin porous graphite sheet to simulate the mass transfer between the inside and outside of the growth chamber. The fluid flow velocity field inside and outside the crucible is calculated inside and outside the crucible under several experimental conditions. Although the exchange of the atmosphere control gas occurs only at the joint, the N2 can still rapidly diffuse to the crystal surface. Single‐crystal silicon carbide (SiC) is an important semiconductor material for the fabrication of power and radio frequency (RF) devices. The major technique for growing single‐crystal SiC is the so‐called physical vapor transport (PVT) method, in which not only the thermal field but also the fluid‐flow field and the distribution of gas species can be hardly measured directly. In this study, a multi‐component flow model is proposed that includes the inside and outside of a growth chamber and a joint between the seed crystal holder and crucible which allows exchanges of the gas species. The joint is simulated as a thin porous graphite sheet. The Hertz‐Knudsen equation is used to describe the sublimation and deposition. The convection and diffusion are described by the Navier–Stokes equations and mixture‐averaged diffusion model, in which the Stefan flow is taken into account. The numerical simulations are conducted by the finite element method (FEM) with a multi‐physics coupled model, which is able to predict the fluid flow field, species distribution field, crystal growth rate, and evolution of the molar concentration of dopant gas. Using this model, the effects of several experimental conditions on the transport of gas species and the growth rate of single‐crystal SiC are analyzed.

Nucleation and Growth of Polycrystalline SiC

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Growth of Single Crystalline 4H-Sic Film by Pyrogenation of PS/OCS/Si(111) Nappe in Low-pressure Ambient Ar and Mechanism of Suppressing Interfacial Dislocations

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Pvt Growth of 6h Sic Crystals and Defect Characterization

Effects of Surface Size and Shape of Evaporation Area on SiC Single-Crystal Growth Using the PVT Method

Analysis of the Morphology of the Growth Interface as a Function of the Gas Phase Composition during the PVT Growth of Silicon Carbide

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals

Restraint of Nucleation of SiC Polycrystals Surrounding the Seed During SiC Single Crystal Growth

Polycrystalline SiC as Source Material for the Growth of Fluorescent SiC Layers

Numerical Simulation of the Transport of Gas Species in the PVT Growth of Single‐Crystal SiC

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Preparation and Characterization of Pure SiC Ceramics by High Temperature Physical Vapor Transport Induced by Seeding with Nano SiC Particles

Influence of Morphological Changes in a Source Material on the Growth Interface of 4H-SiC Single Crystals