Preparation and Characterization of Pure SiC Ceramics by High Temperature Physical Vapor Transport Induced by Seeding with Nano SiC Particles

Yuchen Deng,Yaming Zhang,Nanlong Zhang,Qiang Zhi,Bo Wang,Jianfeng Yang

DOI: https://doi.org/10.1016/j.jmst.2019.04.039

2019-01-01

Journal of Material Science and Technology

Abstract:High temperature physical vapor transport (HTPVT) was employed to grow polycrystalline SiC ceramics with high density and purity, induced by nano SiC particles as seeds. The obtained SiC ceramics were identified as 6H-SiC with a mainly preferred orientation along the (0 0 0 6) plane, and an obvious refinement of grain size was demonstrated for the SiC seeds. Mean grain sizes of the obtained SiC ceramics were 112 mu m and 314 mu m, by using the SiC seeds with the mean particle size of 50 nm and 500 nm, respectively, which were obviously smaller than that of the seed-free sample (960 mu m). The samples obtained with the seeds also demonstrated enhanced flexural strength and hardness, attributing to the reduced mean grain size. Furthermore, SiC ceramics without seeds via HTPVT exhibited a high thermal conductivity of 242 W.(m.K)(-1) at room temperature due to the highly preferred orientation. While the degree of preferred orientation of seed-induced samples was lower, the thermal conductivity of SiC ceramics induced by seeding still maintained at least 200 W.(m.K)(-1) at room temperature, this level was much higher than most other methods. Therefore, seed-induced method appears to be an effective way to control structures and behavior of SiC ceramics through HTPVT. (C) 2019 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.