Polymethylsilane As A Precursor to High-Purity Silicon-Carbide

Z.-F. Zhang,Y. Mu,F. Babonneau,R. M. Laine,J. F. Harrod,J. A. Rahn
DOI: https://doi.org/10.1007/978-94-011-3214-5_10
1991-01-01
Abstract:Polymethylsilane, -[MeHSi]x-, synthesized by dehydrogenative coupling of MeSiH3, will when heated to temperatures in excess of 800°C give almost pure, nanocrystalline SiC. The chemical evolution of polymer to ceramic was followed by 29Si NMR, diffuse reflectance IR and X-ray powder diffractometry. The polymer undergoes a gross structural rearrangement from -[MeHSi]x- to -[H2SiCH2]x- on heating to 400°C. Above 400°C, the resulting polycarbosilane decomposes to a hydrogenated form of SiC as evidence by spectroscopic analysis of the 600°C material. Further heating to 1000°C for 1h provides very narrow 29Si peaks indicative of ß-SiC mixed with small amounts of α-SiC. Chemical analysis, when coupled with the 29Si and the XRD results suggest that polymethylsilane produces reasonably pure, nanocrystalline SiC at temperatures much lower than previously observed for other SiC preceramic polymers.
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