Structure and defect analysis of different polysilazane‐derived silicon carbide systems

Seth Shuster,Scott Bamonte,Joseph Valus,Ryan Purgay,Fayaz Arif,Seth March,Steven L. Suib
DOI: https://doi.org/10.1111/jace.19703
IF: 4.186
2024-01-31
Journal of the American Ceramic Society
Abstract:Polysilazane (PSZ) polymers offer the ability to form silicon carbide (SiC) or silicon nitride (Si3N4) via thermal pyrolysis. The majority of studies surrounding this polymer have focused on the decomposition of PSZ to amorphous glass. Investigations into the structural defects and bonding environments of the final ceramic systems are not as frequently discussed. Examining structural defects/abnormalities can help better use PSZ‐derived ceramics in electronic and high‐temperature applications, where phase identity and microstructure are important. In this work, three PSZ‐derived polymers were synthesized with different C/N ratios (1.33, 1.0, and 1.2) via the ammonolysis condensation reaction with chlorinated silanes. The samples were named PSZ‐SiCF1‐3. Samples were then pyrolyzed under Ar in a tube furnace at 1600°C for 5 h. Characterization included X‐ray diffraction (XRD), Raman spectroscopy, X‐ray photoelectron spectroscopy, scanning transmission electron microscopy, and electron energy loss spectroscopy. XRD measurements uncovered arbitrary stacking fault (SF) measurements of 3C‐SiC to be 4.12, 1.08, and 2.12 (unitless) for samples PSZ‐SiCF1‐3. Results were supported through Raman spectroscopy and TEM. High carbon content, not higher residual nitrogen content, was more impactful for SF formation. This highlights the importance of SFs in the microstructural evolution of non‐oxide ceramics.
materials science, ceramics
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