Abstract:Over the past two decades, there have been numerous reports about the p-type behavior of N-doped ZnO. To date, however, its origin still remains mysterious, especially, N ion-implanted ZnO system. Herein, ZnO films were implanted with 70 keV N ions to a fluence of 1 × 1017 cm−2 at room temperature, followed by annealing in the range of 750–950 °C. The obtained p-type ZnO films have a widely hole concentration of 2.87 × 1015 ~ 2.64 × 1016 cm−3, a mobility of 1.37 ~ 7.27 cm2V-1s−1 and a resistivity of 148.3 ~ 299.4 Ω.cm. The thermal evolution of point defects and the possible shallow acceptors in N-implanted ZnO films were further investigated by means of Raman scattering, Photoluminescence (PL) and Electron paramagnetic resonance (EPR). The results show that abundant intrinsic-related defects including zinc interstitials (Zni), oxygen vacancies (VO) and zinc vacancies (VZn) were introduced during ion implantation. It is demonstrated that appropriate post-annealing can not only reduce the compensation of donor defects, but also facilitate the formation of N-related shallow acceptor complexes, both of which contribute to the p-type conduction transition of N-implanted ZnO films. The non-axial NO-VZn complexes are proposed to be a kind of potential and stable acceptors in N ion-implanted ZnO films.

The origin of the ∼274cm −1 additional Raman mode induced by the incorporation of N dopants and a feasible route to achieve p-type ZnO:N thin films

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

Multiphonon Resonant Raman Scattering in N‐doped ZnO

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Raman studies on Ni-doped ZnO powders

Raman study of N+-implanted ZnO

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Raman scattering and photoluminescence investigations of N doped ZnO thin films: Local vibrational modes and induced ferromagnetism

Compensation Mechanism in N-doped ZnO Nanowires

Controlled Growth of ZnO Films on Si Substrate and N-doping Behavior

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

p-Type conduction in Al–N co-doped ZnO films

Effects of RF power variation on properties of N-doped p-type ZnO thin films grown by plasma-assisted MOCVD

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Raman Study of Lattice Dynamic Behaviors in Phosphorus-Doped Zno Films

Fabrication of Na-N Codoped P-Type ZnO Films by RF Reactive Magnetron Sputtering and Post-annealing

Preparation and Characteristics of P-Type Zno Films by Dc Reactive Magnetron Sputtering

Fabrication and Characterization of Highly Oriented N-Doped Zno Nanorods by Selective Area Epitaxy

Raman Spectroscopy of (mn, Co)-Codoped Zno Films