Abstract:Low-temperature epitaxy of ZnO films was carried out on both Si(00 1) and silica substrates by reactive e-beam evaporation. Growth temperature was varied between 100 degrees C and 450 degrees C. The optimal growth temperatures were between 200 degrees C and 300 degrees C for Si(00 1) substrates and 300 degrees C and 350 degrees C for silica, respectively. Structural and optical characteristics grown on both of Si and silica were compared by measurements of X-ray diffraction, Raman scattering and photoluminescence excitation (PLE) spectroscopy. X-ray diffraction showed the ZnO films grown both on Si(00 1) and silica substrates were all highly c-axis-oriented and their linewidth of (002) diffraction peak is significantly smaller than that measured from ZnO films deposited by magnetron sputtering. However, Raman scattering demonstrated the presence of excess zinc in the ZnO/silica structure. PLE measurements exhibited the sharp band-absorption edge and exciton absorption in the ZnO films on Si(00 1) and poor optical properties of ZnO on silica. PLE also revealed that the absorption characteristic near the band edge remarkably changed with the variation of oxygen content in the ZnO lattice while X-ray diffraction showed that the crystalline structures of ZnO films grown under different O-2 pressure almost remained unchanged. The underlying mechanism of low-temperature epitaxy of high-quality ZnO films and its applications in electronic and optoelectronic devices are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

Controlled Growth of ZnO Films on Si Substrate and N-doping Behavior

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Nitrogen Binding Behavior in ZnO Films with Time-Resolved Cathodoluminescence

Growth and Characteristics of p-Type ZnO Films Doped with Al and N

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Determination of Nitrogen-Related Defects in N-implanted ZnO Films by Dynamic Cathodoluminescence

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Growth and Electric Characteristics of p-Type N-Doped ZnO Film by Metal-Organic Chemical Vapor Deposition

Controlled Growth of Zn-Polar Zno Epitaxial Film by Nitridation of Sapphire Substrate

Na Doping Concentration Tuned Conductivity of ZnO Films Via Pulsed Laser Deposition and Electroluminescence from ZnO Homojunction on Silicon Substrate

Growth and Visible Photoluminescence of Highly Oriented (100) Zinc Oxide Film Synthesized on Silicon by Plasma Immersion Ion Implantation

Oriented growth of ZnO nanostructures on Si and Al substrates

Raman and Photoluminescence of Zno Films Deposited on Si(111) Using Low-Pressure Metalorganic Chemical Vapor Deposition

Growth of Al–N codoped p-type ZnMgO thin films on different substrates

Properties of N-doped ZnO thin films in annealing process

Low-temperature Growth and Raman Scattering Study of Vertically Aligned ZnO Nanowires on Si Substrate

Homoepitaxy of ZnO: from the substrates to doping