Abstract:As semiconductor integration scales expand and chip sizes shrink, Through Silicon Via (TSV) technology advances towards smaller diameters and higher aspect ratios, posing significant challenges in thermo-mechanical reliability, particularly within interposer substrates where mismatched coefficients of thermal expansion exacerbate issues. This study conducts a thermo-mechanical analysis of TSV structures within multi-layered complex interposers, and analyzes the thermal stress behavior and reliability under variable temperature conditions (-55 °C to 85 °C), taking into account the typical electroplating defects within the copper pillars in TSVs. Initially, an overall model is established to determine the critical TSV locations. Sub-model analysis is then employed to investigate the stress and deformation of the most critical TSV, enabling the calculation of the temperature cycle life accordingly. Results indicate that the most critical TSV resides centrally within the model, exhibiting the highest equivalent stress. During the temperature cycling process, the maximum deformation experiences approximately periodic variations, while the maximum equivalent stress undergoes continuous accumulation and gradually diminishes. Its peak occurs at the contact interface corner between the TSV and Redistribution Layer (RDL). The estimated life of the critical point is 3.1708 × 105 cycles. Furthermore, it is observed that electroplating defect b alleviates thermal stress within TSVs during temperature cycling. This study provides insights into TSV thermal behavior and reliability, which are crucial for optimizing the design and manufacturing processes of advanced semiconductor packaging.

Performanace and Reliability Analysis of 3D-Integration Structures Employing Through Silicon Via (TSV)

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Impact of TSV Induced Thermo-Mechanical Stress on Semiconductor Device Performance

Brief Overview of the Impact of Thermal Stress on the Reliability of Through Silicon Via: Analysis, Characterization, and Enhancement

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

Electric-thermo-mechanical Analysis of TSV under High Current Stressing

3D Tcad Modeling for Stress Management in Through Silicon Via (tsv) Stacks

Effects Of Via Pitch On Silicon Stress In Tsv Interposer

Interfacial Stress in Through Silicon Vias

Stress Evolution Mechanism and Thermo-Mechanical Reliability Analysis of Copper-Filled TSV Interposer

Finite Element Stress Analysis Of 3d Tsv Stack Subject To Large Temperature Loading

Reliable Design of Electroplated Copper Through Silicon Vias

The fatigue failure analysis of 3D SiP with Through Silicon Via

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

The thermal stress analysis in 3D IC integration with TSV interposer

Performance Variation of Nano-Scaled Devices in 3D-IC Packaging Architecture Induced by TSV Residual Stress

Material, Process and Geometry Effects on Through-Silicon Via Reliability and Isolation

Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling