Abstract:This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias

Sensitivity analysis of through-silicon via (TSV) interconnects for 3-D ICs

Electrothermal Effects in High Density Through Silicon Via (tsv) Arrays

Study on the behaviors of Cu filling in special through-silicon-vias by the simulation of electric field distribution

Reliable Design of Electroplated Copper Through Silicon Vias

Thermomechanical Characteristics of Copper Through-Silicon Via Structures

Performanace and Reliability Analysis of 3D-Integration Structures Employing Through Silicon Via (TSV)

Effect of Copper TSV Annealing on Via Protrusion for TSV Wafer Fabrication

Thermal–Mechanical Performance Analysis and Structure Optimization of the TSV in 3-D IC

Copper Through Silicon Via (Tsv) For 3d Integration

A Short Review of Through-Silicon Via (TSV) Interconnects: Metrology and Analysis

Elastic Anisotropy of Cu and Its Impact on Stress Management for 3D IC: Nanoindentation and TCAD Simulation Study

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

The Interfacial Thermo-Mechanical Reliability of 3D Memory-Chip Stacking with Through Silicon Via Array

Study on Copper Protrusion of Through-Silicon Via in a 3-D Integrated Circuit

Numerical and Experimental Investigation of Thermomechanical Deformation in High-Aspect-Ratio Electroplated Through-Silicon Vias

Structure Optimization of Through Silicon Via (TSV) Interconnect As Transmission Channel for 3D Integration

Thermal Stress Analysis and Design Guidelines for Through Silicon Via Structure in 3D IC Integration

Thermo-mechanical Reliability of Copper-Filled and Polymer-Filled Through Silicon Vias in 3D Interconnects

Study of the Influence of Elastic Anisotropy of Cu on Thermo-Mechanical Behavior and Cu Protrusion of Through Silicon Vias Using Combined Phase Field and Finite Element Methods