Abstract:In this work, a novel self-aligned source/drain confinement (SA-SDC) scheme is proposed to enable the downsizing of gate-all-around (GAA) nanosheet (NS) field-effect transistors (FETs). Compared with the traditional diamond-shaped source/drain (S/D) epitaxy, the proposed SA-SDC scheme suppresses the lateral over expansion and facilitates wrap-around contact (WAC) formation, resulting in the decrease of device area, parasitic capacitance ( ), and resistance ( ). A calibrated 3-D TCAD simulation demonstrates a 35% reduction in the device RC delay for the SA-SDC NS FET. Considering various device structures and channel stress variations induced by diffusion break integration schemes, a comprehensive investigation of the 15-stage ring oscillator (RO) is conducted. By integrating the stress-enhanced postgate single diffusion break (PG-SDB) process, the SA-SDC NAND2 cell achieves an additional 21% reduction in the power dissipation or a 9% increase in the frequency. Power, performance, and area (PPA) are also collaboratively optimized for different applications using the quantitative quality factor. Particularly, the NAND2 cell is optimized within the constrained footprint. The cell, with 30–40-nm NS width of the n-type device, exhibits the optimal and robust performance for all the simulated technology/design options.

Access Transistor Design And Optimization For 65/45nm High Performance Soi Edram

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Design Guidelines for Oxide Semiconductor Gain Cell Memory on a Logic Platform

High Performance 14nm SOI FinFET CMOS Technology with 0.0174&#x00b5;m<sup>2</sup> Embedded DRAM and 15 Levels of Cu Metallization

Gain Cell eDRAM Design with Stagger Hidden Refresh Scheme

Vertical Surrounding Gate Transistor for High Density and Low Voltage Operation in DRAM

A Semi-Floating Gate Memory Based on SOI Substrate by TCAD Simulation

Optimized Signal Transmission Schemes for High Density Edram

A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology

Design of a Novel One Transistor-Dram Based on Bulk Silicon Substrate

Area-and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C Edram with Cell-System Co-Optimization

Novel 2T gain cell with enhanced retention time for embedded DRAM application

Design Technology Co-Optimization for Gate-All-Around Nanosheet Transistors Considering Source/Drain Confinement and Post- Gate Single Diffusion Break

A 512 Kb SRAM in 65nm CMOS with Divided Bitline and Novel Two-Stage Sensing Technique

The Optimization of Spacer Engineering for Capacitor-Less DRAM Based on the Dual-Gate Tunneling Transistor

Design Technology Co-Optimization for the DRAM Cell Structure With Contact Resistance Variation

High Performance Transistors Featured in an Aggressively Scaled 45nm Bulk Cmos Technology

High Performance 70 Nm Cmos Device and Key Technologies

A logic 2T gain cell eDRAM with enhanced retention and fast write scheme

Design and Implement of Low Power Consumption SRAM Based on Single Port Sense Amplifier in 65 Nm

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET