Abstract:Modern DRAM cells are periodically refreshed to prevent data loss due to leakage. Commodity DDR DRAM refreshes cells at the rank level. This degrades performance significantly because it prevents an entire rank from serving memory requests while being refreshed. DRAM designed for mobile platforms, LPDDR DRAM, supports an enhanced mode, called per-bank refresh, that refreshes cells at the bank level. This enables a bank to be accessed while another in the same rank is being refreshed, alleviating part of the negative performance impact of refreshes. However, there are two shortcomings of per-bank refresh. First, the per-bank refresh scheduling scheme does not exploit the full potential of overlapping refreshes with accesses across banks because it restricts the banks to be refreshed in a sequential round-robin order. Second, accesses to a bank that is being refreshed have to wait. To mitigate the negative performance impact of DRAM refresh, we propose two complementary mechanisms, DARP (Dynamic Access Refresh Parallelization) and SARP (Subarray Access Refresh Parallelization). The goal is to address the drawbacks of per-bank refresh by building more efficient techniques to parallelize refreshes and accesses within DRAM. First, instead of issuing per-bank refreshes in a round-robin order, DARP issues per-bank refreshes to idle banks in an out-of-order manner. Furthermore, DARP schedules refreshes during intervals when a batch of writes are draining to DRAM. Second, SARP exploits the existence of mostly-independent subarrays within a bank. With minor modifications to DRAM organization, it allows a bank to serve memory accesses to an idle subarray while another subarray is being refreshed. Extensive evaluations show that our mechanisms improve system performance and energy efficiency compared to state-of-the-art refresh policies and the benefit increases as DRAM density increases.

Gain Cell eDRAM Design with Stagger Hidden Refresh Scheme

An eDRAM with Logic Technology Using High-Speed R/W and Compact Charge Transfer Refresh Scheme

A Logic-Based Embedded Dram With Novel Cell Structure And Dynamically Adaptive Refresh For Long Data Retention, Zero Data Availability Penalty And High Yield

A logic 2T gain cell eDRAM with enhanced retention and fast write scheme

An Edram Chip Using Low-Power Self Adaptive Dynamic Refresh and Write Voltage Adjustment Scheme

Design Of Almost-Nonvolatile Embedded Dram Using Nanoelectromechanical Relay Devices

Novel 2T gain cell with enhanced retention time for embedded DRAM application

CDAR-DRAM - an In-situ Charge Detection and Adaptive Data Restoration DRAM Architecture for Performance and Energy Efficiency Improvement.

DR DRAM: Accelerating Memory-Read-Intensive Applications

Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories

CR-DRAM: Improving DRAM Refresh Energy Efficiency with Inter-Subarray Charge Recycling

CDAR-DRAM: Enabling Runtime DRAM Performance and Energy Optimization via In-Situ Charge Detection and Adaptive Data Restoration

A BIST Scheme for High-speed Gain Cell Edram

Optimized Signal Transmission Schemes for High Density Edram

High Performance Si-MoS2 Heterogeneous Embedded DRAM

DR Refresh: Releasing DRAM Potential by Enabling Read Accesses under Refresh

Energy-Efficient Edram-Based On-Chip Storage Architecture for GPGPUs

Improving DRAM Performance by Parallelizing Refreshes with Accesses

A Novel Self-Refreshable Capacitorless DRAM Cell and Its Extended Applications

Improved Parasitic Capacitance-Predictively Aware DTCO: Enhanced Cell Efficiency with Manufacturability and Scalability for 4f$^{\text{2}}$ VCT-Based DRAM

The Evaluation of a Novel Concurrent-Refresh-Aware DRAM System