An Edram Chip Using Low-Power Self Adaptive Dynamic Refresh and Write Voltage Adjustment Scheme

董存霖,孟超,程宽,林殷茵
DOI: https://doi.org/10.15943/j.cnki.fdxb-jns.2012.01.004
2012-01-01
Abstract:The eDRAM cell consists of 2 PMOS transistors to form a gain cell,whose size is only 40% of 6T SRAM cell.Without the size increase,the Uth and layout structure are optimized to result 2—3 times improvement of the retention time.With introducing the monitoring cells scheme,the eDRAM chip can dynamically change its refreshing frequency and write voltage according to the temperature and write disturbance variation,which saves 25%—30% refreshing power.
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