Abstract:The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM). Recently, the tunneling FET (TFET) is applied in DRAM cell due to the low off-state current and high switching ratio. The dual-gate TFET (DG-TFET) DRAM cell with the capacitorless structure has the superior performance-higher retention time (RT) and weak temperature dependence. But the performance of TFET DRAM cell is sensitive to programming condition. In this paper, the guideline of programming optimization is discussed in detail by using simulation tool-Silvaco Atlas. Both the writing and reading operations of DG-TFET DRAM depend on the band-to-band tunneling (BTBT). During the writing operation, the holes coming from BTBT governed by Gate2 are stored in potential well under Gate2. A small negative voltage is applied at Gate2 to retain holes for a long time during holding "1". The BTBT governed by Gate1 mainly influences the reading current. Using the optimized programming condition, the DG-TFET DRAM obtains the higher current ratio of reading "1" to reading "0" (107) and RT of more than 2 s. The higher RT reduces the refresh rate and dynamic power consumption of DRAM.

A Novel Self-Refreshable Capacitorless DRAM Cell and Its Extended Applications

Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories

Capacitorless One-Transistor Dynamic Random-Access Memory with Novel Mechanism: Self-Refreshing

Design of a Novel High Speed Embedded DRAM

A 2T Dual Port Capacitor-Less DRAM

A Novel Capacitorless 1T DRAM with Embedded Oxide Layer

Design Of A Novel Capacitorless Dram Cell With Enhanced Retention Performance

A Novel 1T-1D DRAM Cell for Embedded Application

A Novel CMOS FEOL-Embedded Asymmetrical FET for Capacitor-less and Long-Retention DRAM Based on 300mm Logic Foundry Platform

A Semi-Floating Gate Memory with Tensile Stress for Enhanced Performance

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain

Innovative Capacitorless SOI DRAMs

A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation

A Novel Dual-Doping Floating-Gate (ddfg) Flash Memory Featuring Low Power and High Reliability Application

Novel 2T DRAM by Storing Data in One Alternative Gate of a Double-Gate Transistor with a Low-leakage Oxide Transistor

Novel SONOS and Floating-Gate Flash Memory Cell Structures for High Density and High Reliability Applications

Applications of tunneling FET in memory devices

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A Compact Capacitor-Less High-Speed DRAM Using Field Effect-Controlled Charge Regeneration

A Novel Interface Trap 1T0C In-Ga-Zn Oxide DRAM Cell with Enhanced Data Retention