Abstract:Pulsed laser deposition (PLD) and two-step thermal annealing are combined to fabricate MgO, TiO 2 , Y 2 O 3 , Al 2 O 3 , ZrO 2 and HfO 2 passivation layers on a-IGZO TFTs. The influences of the passivation layers on the electrical properties are investigated. It is found that conventional PLD is sufficient to deposit high-quality Y 2 O 3 and ZrO 2 passivation layers, but hollow cathode assisted PLD (HC-PLD) should be employed to solve the oxygen deficiency in MgO, TiO 2 , Al 2 O 3 , and HfO 2 thin films by oxygen plasma. Furthermore, two-step annealing is adopted to improve the performances of the devices: Firstly, a-IGZO thin films are pre-annealed to enhance the carrier mobility. Secondly, the passivation layers are deposited on a-IGZO and the whole structures are post-annealed to endow the good on-off performance. The sharp a-IGZO/passivation interfaces remain after thermal annealing. The Hall mobility is mainly restricted by the scattering of metal ions at the a-IGZO/passivation interface. TiO 2 passivated devices exhibit the highest Hall mobility of 16.7 cm 2 V −1 s −1 , owing to the smaller cation charge. The threshold voltage stability under positive gate bias is dependent on the metal-oxygen bond strength in the passivation layers. ZrO 2 passivated devices have the lowest threshold voltage shift, beneficial from the strong Zr-O bonds. The subthreshold performance and the stability under illumination are determined by the oxygen vacancies at a-IGZO/passivation interfaces and ZrO 2 passivated devices exhibit the lowest subthreshold swing and the best illumination stability.

Influence of passivation deposition on the performance of In-Zn-O thin-film transistors based on etch-stopper structure

Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Enhanced performances of a-IGZO TFTs with oxide passivation layers fabricated by hollow cathode assisted PLD

Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

Effective encapsulation of ZnO thin film transistors controlled by thermal energy

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Facile Room Temperature Routes to Improve Performance of IGZO Thin-Film Transistors by an Ultrathin Al2O3 Passivation Layer

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Highly Stable Flexible Thin-Film Transistors in Harsh Environments by Superhydrophobic Passivations

P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs

Influence of precursor purge time on the performance of ZnO TFTs fabricated by atomic layer deposition

A Study on the Bottom-gate ITO-stabilized ZnO Thin-Film Transistors