Abstract:To realize high-performance and stable electrical characteristics for ZnO-based thin-film transistors (TFTs) under various environments, we propose InSnZnO (ITZO) TFTs with multifunctional laminated organic (MLO) passivation layers (PVLs). The MLO PVLs were constructed from self-assembled monolayers (SAMs) and an ultraviolet (UV) light absorber-modified polydimethylsiloxane (PDMS) layer. The SAMs can passivate the ITZO surface and suppress the chemical reaction during the spin-coating process, and the modified PDMS layer can block UV light. The MLO-treated ITZO TFTs exhibited a high-performance and robust stability with high mobility (~21.18 cm2 V−1 s−1), a considerable ON– OFF current ratio (~ 9), and a steep subthreshold slope (~100 mV/dec). The shift of the threshold voltage ( ) under gate bias stress and UV light illumination stress was investigated for the devices with different PVLs. The ITZO TFTs with MLO PVLs showed improved stability under positive gate bias stress (PBS), positive gate bias illumination stress (PBIS), and negative gate bias illumination stress (NBIS) compared to untreated and SAM-treated ITZO TFTs. Furthermore, the MLO-treated ITZO TFTs achieved a weak response to 365-nm UV light and showed superb stability with the negligible change of electrical performance, even after a 1-h water soaking test and a 100-day storing test. In addition, the MLO PVL exhibited high flexibility without signs of cracking even after 10 000 bending cycles and was proven suitable for fabricating flexible ox- de TFTs.

Impact of Deposition Temperature of the Silicon Oxide Passivation on the Performance of Indium Zinc Oxide Thin-Film Transistors

Influence of passivation deposition on the performance of In-Zn-O thin-film transistors based on etch-stopper structure

Atmosphere Effect in Post-Annealing Treatments for Amorphous InGaZnO Thin-Film Transistors with SiOx Passivation Layers

30.3: Impact of Top Gate Insulator Deposition Temperature on Electrical Performance of Dual‐Gate a‐InZnO TFTs

Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment

Influence Of Passivation Layers On Positive Gate Bias-Stress Stability Of Amorphous Ingazno Thin-Film Transistors

P‐1.2: Photoluminescence and Electrical Properties Study of ITO‐stabilized ZnO Thin‐Film Transistors with Different Annealing Temperatures

Solution-Processed Indium-Zinc-Oxide Thin-Film Transistors Based On Anodized Aluminum Oxide Gate Insulator Modified With Zirconium Oxide

Significant Performance and Stability Improvements of Low-Temperature IGZO TFTs by the Formation of In-F Nanoparticles on an SiO2 Buffer Layer

Effect of Sc2O3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

Improvement in Reliability of Amorphous Indium–gallium–zinc Oxide Thin-Film Transistors with Teflon/SiO2 Bilayer Passivation under Gate Bias Stress

Effect of Sc 2 O 3 Passivation Layer on the Electrical Characteristics and Stability of InSnZnO Thin-Film Transistors

P-1.6: Effect of Deposition Condition of Passivation Layer on the Performance of Self-Aligned Top-Gate a-IGZO TFTs

Improved Performance and Bias Stability of Al2O3/IZO Thin-Film Transistors with Vertical Diffusion

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Effect of Source/drain Preparation on the Performance of Oxide Thin-Film Transistors

Enhanced Electrical and Mechanical Performance of InSnZnO TFTs With Multifunctional Laminated Organic Passivation Layer

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Improving Thermal Stability of Solution-Processed Indium Zinc Oxide Thin-Film Transistors by Praseodymium Oxide Doping.