High Linearly Polarized Light Emission from Gan-Based Led with Patterned Dielectric/Metal Structures

Miao Wang,Bing Cao,Fuyang Xu,Jingpei Hu,Jianfeng Wang,Ke Xu,Chinhua Wang

DOI: https://doi.org/10.1117/12.2189257

2015-01-01

Abstract:We proposed and demonstrated an integrated high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with a structure of combined dielectric/metal wire grids (CDMWG). Both theoretical and experimental results show that the CDMWG can effectively loosen the requirement on the dimension of the grating, and the introduction of a low-refractive dielectric layer can further enhance both TMT and ER significantly for the GaN-type LED. An InGaN/GaN green LED with an integrated CDMWG of 220 nm period has been fabricated, and a measured extinction ratio(ER) of higher than 20 dB and TMT of 65% within an angle of +/-40 degrees is obtained directly from a InGaN/GaN LED.