Abstract:Wurtzite structured GaN has a severe polarization effect in the c (0001) plane, compared to which the polarization effect is small in the semipolar (11–22) plane, and there is no polarization effect in the nonpolar (11–20) plane GaN. To investigate the influence of the polarization effect on the band bending at the heterojunction interface, we fabricated tungsten diselenide (WSe2)/(0001) GaN, WSe2/(11–22) GaN, and WSe2/(11–20) GaN heterojunctions. We measured the heterojunction valence band offsets (VBOs) by x-ray photoelectron spectroscopy. The VBOs of the three WSe2/GaN heterojunctions were measured to be 2.43 ± 0.15, 2.51 ± 0.15, and 2.23 ± 0.15 eV, and the conduction band offsets were calculated to be 1.11 ± 0.15, 1.19 ± 0.15, and 0.91 ± 0.15 eV, showing the type II energy band alignment of the three heterojunctions. The results demonstrate that WSe2/(11–22) GaN-faced heterojunction band bending is the largest. This provides theoretical insights for two-dimensional WSe2 and three-dimensional semipolar (11–22) GaN and nonpolar (11–20) GaN heterojunction device preparation.

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