Abstract:The resistive switching interface is promising for building random access memory devices with electroforming-free characteristics, rectification functionality and highly reproducible resistive switching performance. The electronic structures of the resistive switching interface are important not only from a fundamental point of view, but also from the fascinating perspective of interface engineering for high performance devices. However, the electronic properties of typical resistive switching interfacial structures at an atomic level are less well understood, compared to those of bulky resistive switching structures. In this work, we study the electronic structures of two typical resistive switching interfacial structures, TiO 2 /Ti 4 O 7 and Ta 2 O 5 /TaO 2 , using the screened exchange (sX-LDA) functional. We uncover that the system Fermi energies of both interfaces are just above the conduction band edge of the corresponding stoichiometric oxides. According to the defect charge transition levels, the oxygen vacancy is stabilized at the −2 charged state in Ta 2 O 5 and TiO 2 where the switching takes place. However, it is desirable for the +2 charged oxygen vacancy to be stabilized to achieve controlled resistive switching under the electrical field. We propose to introduce interfacial dopants to shift the system Fermi energies downward so that the +2 charged oxygen vacancy can be stable. Several dipole models are presented to account for the ability of the Fermi level to shift due to the interfacial dopants. These methods are readily applicable to interface engineering for high performance devices.

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Improvement of Resistive Switching Uniformity for Tio2-Based Memristive Devices by Introducing A Thin Hfo2 Layer

Resistive Switching Mechanisms Relating to Oxygen Vacancies Migration in Both Interfaces in Ti/Hfox/Pt Memory Devices

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode

Improvement of Reliability Characteristics of Tio2-Based Resistive Switching Memory Device with an Inserted Zno Layer

Improvement of resistive switching characteristics in ZrO2 film by embedding a thin TiOx layer.

Enhancement Of Resistive Switching Ratio Induced By Competing Interfacial Oxygen Diffusion In Tantalum Oxide Based Memories With Metal Nitride Electrode

Stable and reliable IGZO resistive switching device with HfAlOx interfacial layer

Ultra-Low Voltage Resistive Switching Of Hfo2 Buffered (001) Epitaxial Nio Films Deposited On Metal Seed Layers

Bistable Resistance Switching of Cu/Cu: HfO2/Pt for Nonvolatile Memory Application

The current limit and self-rectification functionalities in the TiO2/HfO2 resistive switching material system

Migration of Interfacial Oxygen Ions Modulated Resistive Switching in Oxide-Based Memory Devices

Insight into interface behavior and microscopic switching mechanism for flexible HfO2 RRAM

Identifying and Engineering the Electronic Properties of the Resistive Switching Interface

Charge Transport and Bipolar Switching Mechanism in a Cu/HfO 2 /pt Resistive Switching Cell

TiWOx Interfacial Layer for Current Reduction and Cyclability Enhancement of Phase Change Memory

Electrode Effect on Resistive Switching of Ti-added Amorphous SiOx Films

EFFECTS OFTiOxINTERLAYER ON RESISTANCE SWITCHING OFPt/TiOx/ZnO/n+-SiSTRUCTURES

Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineering