Abstract:The emergence of 2D wide-bandgap semiconductor (WBGS) GeSe2 as charge-trapping dielectrics has helped realize superior devices by using an extremely simple device setup. However, the controllability of deep-gap-state defects in 2D GeSe2 poses a challenge due to the vulnerability and susceptibility of charge-trapping centers, resulting in various problems, i.e., small memory window and poor device durability during programming. Herein, we deliberately perform asymmetric interfacial oxidation to reinforce the memory performance based on the WSe2/Janus-GeSe2 van der Waals heterostructure, which exhibits a giant memory window ratio of 88.5% (70.8 V at ±40 V gate sweep range), high-room-temperature hole mobility of 15 cm2 V–1 s–1, and low nonlinearity factor close to 0 with regard to synaptic weight update characteristics. The information storage performance is excellent, owing to the interface rendered by asymmetric oxidation in the GeSe2 layer, providing an effective charge-trapping layer and atomically flat surface to enhance the mobility of the WSe2 channel. The controllable strategy helps to derive a simple design principle to realize high-performance 2D WBGS GeSe2-based memory and electrical synaptic devices with complex neural functions.

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