Abstract:A novel method, single‐step anisotropic wet etching, is developed to fabricate nanowire‐based GaN memory. The wet etchant alters the surface states of the GaN nanowires. The surface states on the nanowires are responsible for the control between different states of memristive functions. Moreover, the memristive modes of GaN nanowire memory integrate multiple‐state switching and Ca2+ dynamics‐imitating synaptic actions. Nitride materials for memristors are benefited from their high response speed and high power density. The memristive effects on 1D nitride structures has not yet been elucidated. Hence, the activation of the memristive capability of nanowire (NW)‐based nitride memristors using an uncomplicated fabrication as single‐step anisotropic wet etching is proposed. Among nitrides, gallium nitride, a third‐generation semiconductor, exhibits properties potentially suitable for neuromorphic applications. The wet etchant considerably alters the chemisorbed molecules and dangling bonds associated with the surface states of the nanowires. A device based on such NWs which exhibits low power consumption with no required compliance current and forming voltage for operation is demonstrated. It can integrate all memristive capabilities, including multiple state switching, nonvolatile bipolar memory, and Ca2+ dynamics‐imitating synaptic actions. The examination of the memristive process also highlights the significance of altering surfaces in the devices, in addition to the shared principles that underlie biological and artificial synapses. The operating mode of the nitride‐nanowire devices can be controlled by controlling the formation/dissolution of the oxygen‐conductive path along the nanowires. Thus, the study realizes nanowire memristors based on a nitride material framework, that is promising for application in the 1D–1D system downsizing required for the bio‐inspired artificial synapse.

Intrinsic Ge Nanowire Nonvolatile Memory Based on A Simple Core-Shell Structure

Nonvolatile multibit Schottky memory based on single n-type Ga doped CdSe nanowires.

Effect of Annealing on Charge Transfer in Ge Nanocrystal Based Nonvolatile Memory Structure

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

High Performance Nonvolatile Memory Devices Based On Cu2-Xse Nanowires

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Carbon Nanotube-Based Nonvolatile Memory with Charge Storage in Metal Nanocrystals

Nonvolatile Memory Based on Ge/Si Hetero-Nanocrystals

Formation of NiSi2/SiN compound nanocrystal for nonvolatile memory application

Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application

Phase-Change Nanowires for Non Volatile Memory

Design of non-volatile capacitive memory using axial type-II heterostructure nanowires of NiO/β-Ga2O3

GeSi/Si Hetero‐nanocrystals and the Applications in MOSFET Memories

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Formation of Cosi2/Cosixny Nanocrystals for Nonvolatile Memory Application

Wet‐Etching‐Boosted Charge Storage in 1D Nitride‐Based Systems for Imitating Biological Synaptic Behaviors

Nanowire Switches: Resistive‐Switching Crossbar Memory Based on Ni–NiO Core–Shell Nanowires (small 20/2011)

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

Side-Gated In2O3 Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.

Optoelectronic Nonvolatile Memories Using Graphene/Hexagonal Boron Nitride/Rhenium Disulfide Heterostructure

Resistive-switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires.