Abstract:The diversification of data types and the explosive increase of data size in the information era continuously required to miniaturize the memory devices with high data storage capability. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for flexible and transparent electronic and optoelectronic devices with high integration density. Multistate memory devices based on TMDs could possess high data storage capability with a large integration density and thus exhibit great potential applications in the field of data storage. Here, we report the multistate data storage based on multilayer tungsten diselenide (WSe2) transistors by interface engineering. The multiple resistance states of the WSe2 transistors are achieved by applying different gate voltage pulses, and the switching ratio of the memory can be as large as 105 with high cycling endurance. The water and oxygen molecules (H2O/O2) trapped at the interface between the SiO2 substrate and WSe2 introduce the trap states and thus the large hysteresis of the transfer curves, which leads to the multistate data storage. In addition, the laminated Au thin film electrodes make the contact interface between the electrodes and WSe2 free of dangling bond and Fermi level pinning, thus giving rise to the excellent performance of memory devices. Importantly, the interface trap states can be easily controlled by a simple oxygen plasma treatment of the SiO2 substrate, and subsequently, the performance of the multistate memory devices can be manipulated. Our findings provide a simple and efficient strategy to engineer the interface states for the multistate data storage applications and would motivate more investigations on the trap state-associated applications.

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Memory Window Ratio Enhancement of P-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Stacking the MoS2/GeSe2 Vertical Van Der Waals Heterostructure for Memory Device

WSe 2 /WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Nonvolatile Memory Devices Based on Two-Dimensional WSe2/MoS2 Van Der Waals Heterostructure

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Two-Dimensional WSe 2 /Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping.

Electrically Tuning Interfacial Ion Redistribution for mica/WSe<sub>2</sub> Memory Transistor

High-Performance Floating Gate Heterostructure with WSe2-MoS2 Diode Channel for Neural Synapse

Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor

Ferroelectric Field-Effect Transistors Based on WSe 2 /CuInP 2 S 6 Heterostructures for Memory Applications

Reconfigurable Dielectric Engineered WSe 2 /HZO Mem-transistor

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure

Emulation of Optoelectronic Synaptic Behavior in a MoS2/WSe2-Based P–n Van Der Waals Heterostructure Memtransistor

Ultrafast and Low-Power 2D Bi 2 O 2 Se Memristors for Neuromorphic Computing Applications

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Multistate Memory Enabled by Interface Engineering Based on Multilayer Tungsten Diselenide

Artificial Synapses Based on WSe2 Homojunction via Vacancy Migration