Abstract:The diversification of data types and the explosive increase of data size in the information era continuously required to miniaturize the memory devices with high data storage capability. Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs) are promising candidates for flexible and transparent electronic and optoelectronic devices with high integration density. Multistate memory devices based on TMDs could possess high data storage capability with a large integration density and thus exhibit great potential applications in the field of data storage. Here, we report the multistate data storage based on multilayer tungsten diselenide (WSe2) transistors by interface engineering. The multiple resistance states of the WSe2 transistors are achieved by applying different gate voltage pulses, and the switching ratio of the memory can be as large as 105 with high cycling endurance. The water and oxygen molecules (H2O/O2) trapped at the interface between the SiO2 substrate and WSe2 introduce the trap states and thus the large hysteresis of the transfer curves, which leads to the multistate data storage. In addition, the laminated Au thin film electrodes make the contact interface between the electrodes and WSe2 free of dangling bond and Fermi level pinning, thus giving rise to the excellent performance of memory devices. Importantly, the interface trap states can be easily controlled by a simple oxygen plasma treatment of the SiO2 substrate, and subsequently, the performance of the multistate memory devices can be manipulated. Our findings provide a simple and efficient strategy to engineer the interface states for the multistate data storage applications and would motivate more investigations on the trap state-associated applications.

WSe 2 /WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention

Two-Dimensional WSe 2 /Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping.

Nonvolatile Memory Devices Based on Two-Dimensional WSe2/MoS2 Van Der Waals Heterostructure

Memory Window Ratio Enhancement of P-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe2 Structure

Optical Readout of Charge Carriers Stored in a 2D Memory Cell of Monolayer WSe2

Molecularly thin electrolyte for all-solid-state non-volatile two-dimensional crystal memory.

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

Multibit Non-Volatile Memory Based on WS2 Transistor with Engineered Gate Stack

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

New Floating Gate Memory with Excellent Retention Characteristics

All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration

Non-volatile Multi-Level Cell Storage Via Sequential Phase Transition in Sb7Te3/GeSb6Te Multilayer Thin Film

Multistate Memory Enabled by Interface Engineering Based on Multilayer Tungsten Diselenide

Nonvolatile charge memory with optical controllability in two-terminal pristine α-In2Se3 nanosheets

High-performance Nonvolatile Al/AlOx/CdTe:Sb Nanowire Memory Device

Tunable non-volatile memories based on 2D InSe/ h-BN/GaSe heterostructures towards potential multifunctionality

Highly Reliable Van Der Waals Memory Boosted by a Single 2D Charge Trap Medium.

Ferroelectric Field-Effect Transistors Based on WSe2/CuInP2S6 Heterostructures for Memory Applications

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van Der Waals Heterostructure.