Abstract:As the continuous miniaturization of floating-gate transistors approaches a physical limit, new innovations in device architectures, working principles, and device materials are in high demand. This study demonstrated a nonvolatile memory structure with multilevel data storage that features a van der Waals gate architecture made up of a partially oxidized surface layer/indium selenide (InSe) van der Waals interface. The key functionality of this proof-of-concept device is provided through the generation of charge-trapping sites via an indirect oxygen plasma treatment on the InSe surface layer. In contrast to floating-gate nonvolatile memory, these sites have the ability to retain charge without the help of a gate dielectric. Together with the layered structure, the surface layer with charge-trapping sites facilitates continual electrostatic doping in the underlying InSe layers. The van der Waals gating effect is further supported by trapped charge-induced core-level energy shifts and relative work function variations obtained from operando scanning X-ray photoelectron spectroscopy and Kelvin probe microscopy, respectively. On modulating the amount of electric field-induced trapped electrons by the electrostatic gate potential, eight distinct storage states remained over 3000 s. Moreover, the device exhibits a high current switching ratio of 106 within 11 cycles. The demonstrated characteristics suggest that the engineering of an InSe interface has potential applications for nonvolatile memory.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c16336?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c16336</a>.InSe flake thickness determination; InSe device in a test tube for indirect oxygen plasma treatment; IDS–T of the pristine InSe device in response to various VG values; retention time comparison at high and low drain voltages; effect of the trapped carrier on the IDS–VG property; lifetime fitting of traps; and lifetime measurements for the InSe memory device reproducibility test (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c16336/suppl_file/am0c16336_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD‐Grown 2D Layered Ge4Se9

Stacking the MoS2/GeSe2 Vertical Van Der Waals Heterostructure for Memory Device

Memory Window Ratio Enhancement of p-Type WSe 2 Memtransistors Using Dielectric GeSe 2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Memory Window Ratio Enhancement of P-Type WSe2 Memtransistors Using Dielectric GeSe2 Nanosheets with Asymmetric Interfaces for Neuromorphic Computing

Controllable memory window in two-dimensional hybrid van der Waals heterostructured devices

Nonvolatile Memory Devices Based on Two-Dimensional WSe2/MoS2 Van Der Waals Heterostructure

Two-Dimensional Gase/Mose2 Misfit Bilayer Heterojunctions by Van Der Waals Epitaxy

Distinctive Photo‐Induced Memory Effect in Heterostructure of 2D Van Der Waals Materials and Lanthanum Aluminate

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS2 Van Der Waals Heterostructure.

Artificially created interfacial states enabled van der Waals heterostructure memory device

Tunable Nonvolatile Memory Behaviors of PCBM-MoS2 2D Nanocomposites Through Surface Deposition Ratio Control

Engineering an Indium Selenide van der Waals Interface for Multilevel Charge Storage

High-throughput screening to identify two-dimensional layered phase-change chalcogenides for embedded memory applications

Direct Charge Trapping Multilevel Memory with Graphdiyne/MoS 2 Van der Waals Heterostructure

A Gate Programmable van der Waals Metal‐Ferroelectric‐Semiconductor Vertical Heterojunction Memory

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Two Step Chemical Vapor Deposition of In2se3/Mose2 Van Der Waals Heterostructures

Cation-eutaxy-enabled III–V-derived van der Waals crystals as memristive semiconductors

Preparation and optoelectronic performance of two-dimensional MoSe2/WSe2 lateral and vertical heterostructures

In-plane Ferroelectricity in Few-Layered GeS and Its Van Der Waals Ferroelectric Diodes

Non-epitaxial single-crystal 2D material growth by geometric confinement