Multilevel Nonvolatile Memories Based on Nanowire/Molecular Wire Heterostructures

Li Chao,Eloret Corporation, MS-1,Lei Bo,Zhang Daihua,Zhou Chongwu

DOI: https://doi.org/10.1557/proc-818-m12.7.1

2004-01-01

Abstract:Nonvolatile nanoscale memories with ultra-long retention times have been demonstrated for both binary and multilevel applications. These devices were based on nanowires functionalized with a self-assembled monolayer of redox active molecular wires, where the bit was represented by the charge stored in the redox molecules and the nanowire conductance was used as the readout. Our devices exhibited reliable operation, on/off ratios ~ 104 and retention times ~ one month, one of the longest retention times ever achieved with nanoscale devices. These devices were further tailored for multilevel data storage with appreciable noise margins, representing a new concept for functional devices. Our work clearly demonstrates the potential of combining nanowires and molecular wires for superior performance.