Abstract:The intrinsic ferroelectric switching characteristics of aluminum scandium nitride has been revealed and the profound effect of defects on the nucleation and domain propagation is systematically studied. The device integration of aluminum scandium nitride and 2D materials holds great potential for neuromorphic computing. Aluminum Scandium Nitride (Al1−xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation‐based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183 ps, is captured, and effectively simulated using a nucleation‐limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long‐term reliability of devices is also confirmed by time‐dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field‐effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN‐based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.

Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing

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Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory.

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Energy-efficient Non-Volatile Ferroelectric Based Electrostatic Doping Multilevel Optical Readout Memory.

Ferroelectric Memory Based on Nanostructures

Ferroelectric Perovskite/MoS2 Channel Heterojunctions for Wide-Window Nonvolatile Memory and Neuromorphic Computing.

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A ferroelectric memristor with a capacitor-like structure for neuromorphic computing

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