Abstract:High readout domain-wall currents in LiNbO3 single-crystal nanodevices are attractive because of their application in a ferroelectric domain wall random access memory (DWRAM) to drive a fast memory circuit. However, the wall current at a small read voltage would increase nonlinearly at a much higher write voltage, which could cause high energy consumption. Here, we resolved this problem by controlling the two-step domain forward growth within a ferroelectric mesa-like cell that was formed at the surface of an X-cut LiNbO3 single crystal. The mesa-like cell contacts two side Pt/Ni electrodes that extend over the cell surface by 90 nm for the generation of an in-plane inhomogeneous electric field. The domain forward growth processes at first in the formation of an inclined charged 180° domain to span the in-plane electrode gap under a write voltage of 5 V in a large readout wall current, and then, the domain expands fully throughout the entire cell in the formation of a neutral 180° wall to reduce the wall current by 10 times at a higher write voltage of 6 V. Meantime, the domain below the mesa-like cell in an opposite orientation is unchanged to serve as the reference. A higher wall current at a lower read voltage and a lower wall current at a higher write voltage can satisfy both requirements of low energy consumption and fast operation speeds for the DWRAM.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c13534?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c13534</a>.Electric potential distributions, in-plane PFM phase images, and Ir–Vw hysteresis loops (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c13534/suppl_file/am0c13534_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Multilevel Ferroelectric Domain Wall Memory for Neuromorphic Computing

Multi‐Functional Ferroelectric Domain Wall Nanodevices for In‐Memory Computing and Light Sensing

Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

In‐Memory Computing of Multilevel Ferroelectric Domain Wall Diodes at LiNbO3 Interfaces

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Single-crystal ferroelectric LiNbO3 thin film-based synaptic devices enabled with tunable domain wall current for neuromorphic computing

Ferroelectric materials for neuroinspired computing applications

Ferroelectric Domain Wall Memory and Logic

Composition‐Graded Nitride Ferroelectrics Based Multi‐Level Non‐Volatile Memory for Neuromorphic Computing

Roadmap for Ferroelectric Domain Wall Memory

Next-generation Ferroelectric Domain-Wall Memories: Principle and Architecture

Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing

Nonvolatile Ferroelectric LiNbO3 Domain Wall Crossbar Memory

Reconfigurable Multilevel Storage and Neuromorphic Computing Based on Multilayer Phase-Change Memory

Ultralow-power in-memory computing based on ferroelectric memcapacitor network

Integration of Neuromorphic and Reconfigurable Logic-in-Memory Operations in an Electrolyte-Manipulated Ferroelectric Organic Neuristor.

Ferroelectric memristor and its neuromorphic computing applications

Enhancing Memory Window Efficiency of Ferroelectric Transistor for Neuromorphic Computing via Two‐Dimensional Materials Integration

Ferroelectric memory based on two-dimensional materials for neuromorphic computing

Energy-Efficient Ferroelectric Domain Wall Memory with Controlled Domain Switching Dynamics