Preparation of Se,Cu2Se nanowires and their nanoelectronic device performance

Yun Zhao,Donghuan Qin,Hong Tao,Linfeng Lan,Chan Keith
DOI: https://doi.org/10.3969/j.issn.1006-3536.2008.09.009
2008-01-01
Abstract:We prepared Se and Cu2Se nanowires(NWs) by a chemical solution process.Transmission Electron Microscopy(TEM),High resolution TEM(HRTEM) and X-ray diffraction(XRD) were used to characterize the morphology and structural characterization of the NWs.The results implied that the Se NWs were single crystalline and grew along the c-axis,the direction paralleled to the helical chains of Se atoms.Single Se and Cu2Se Single Se NW nanoelectronic device were prepared through photolithographic patterning.Our research indicated that the single Se NW device was p-type semiconductors while the Cu2Se showed very good phase transfer properties.This finding on the Se and Cu2Se will open broad implications and provide very useful information on quality NW FETs or phase transfer memory device
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