Abstract:High-performance memory devices play an essential role in the innovation of modern electronics. Developing ultrafast memory devices has become imperative in response to large-scale data storage and ultra-fast data processing demands. Among these, resistive random-access memory (RRAM) has attracted much attention due to its fast read/write speeds, excellent scalability, and simple structure. RRAM devices have metal/active layer/metal sandwich structures, where the active layer could convert between high-resistance (HRS) and low-resistance states (LRS) under an electric field. Common active layers include inorganic materials, conjugated polymers, organic small molecules, and organic/inorganic hybrid materials. Among them, metal–organic frameworks (MOFs), one of the typical organic–inorganic hybrid materials, possess a porous structure and diverse topologies, making them promising candidates for gas adsorption and separation, catalysis, and sensing applications. There was relatively little research on MOFs for electronic devices, mainly due to MOF films' conductivity and thickness. Although insulators could be used as active layers for memory devices, the thickness of the MOF active layers has a more significant impact on the performance of memory devices. Compared to MOF bulk crystals or MOF nanoparticles, MOF nanosheets have a unique two-dimensional morphology and nanoscale thickness, which retain the original properties of MOFs and are easy to form thin films. Recent research has been conducted on the synthesis and properties of MOF nanosheets, demonstrating superior performance compared to bulk MOFs or nanoparticles. This review first introduces the synthesis methods of MOF nanosheets, including top-down and bottom-up synthesis methods, then discusses the application of MOF materials in RRAM memory devices, and finally explores the challenges and prospects of MOFs in developing RRAM memory devices.

Single-crystalline CuO Nanowires for Resistive Random Access Memory Applications

Electrothermal Modeling and Simulation of Resistive Random Access Memory (RRAM) with Different Resistive Switching Oxides

Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire

Vacancy Associates-Rich Ultrathin Nanosheets for High Performance and Flexible Nonvolatile Memory Device

Intensive harmonized synapses with amorphous Cu2O-based memristive using ultrafine Cu nanoparticle sublayers formed via atomically controlled Electrochemical Pulse Deposition

Highly Scalable Resistive Switching Memory in Metal Nanowire Crossbar Arrays Fabricated by Electron Beam Lithography

Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arrays

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments

The synthesis of MOF nanosheets and their application in MOF-based resistance random access memory devices

Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power

Electrical properties and carrier transport mechanisms of nonvolatile memory devices based on randomly oriented ZnO nanowire networks

Resistive-switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires.

Resistive switching mechanism of Cu doped ZrO2-based RRAM

Interface Engineering with MoS2-Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory

In Situ Observation of Nickel As an Oxidizable Electrode Material for the Solid-Electrolyte-Based Resistive Random Access Memory

Stability Enhancement in Copper-Doped Iron Oxide Resistive Random Access Memory via RF Co-Sputtering

Low Power and High Uniformity of HfOx-based RRAM Via Tip-Enhanced Electric Fields

Ultralow Operating Voltage Nb2O5-Based Multilevel Resistive Memory with Direct Observation of Cu Conductive Filament

Performance Improvement of CuOx RRAM for Non-volatile Applications