Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

The Coalescence of [001]diamond Grains Heteroepitaxially Grown on (001) Silicon

Coalescence and overgrowth of diamond grains for improved heteroepitaxy on silicon (001)

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Approach of selective nucleation and epitaxy of diamond films on Si(100)

Coalescence as a key process in wafer-scale diamond heteroepitaxy

Oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition

Crystalline Diamond Growth in Thin Films Deposited from a CH4/Ar Rf Plasma

Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition

Local Heteroepitaxial Diamond Formed Directly on Silicon-Wafers and Observed by High-Resolution Electron-Microscopy

Heteroepitaxial nucleation of diamond on Si(001) in hot filament chemical vapor deposition

Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition

The Coalescence Behavior of Two-Dimensional Materials Revealed by Multiscale in Situ Imaging During Chemical Vapor Deposition Growth.

The Crystallographic Relationship of Heteroepitaxial Diamond Films on Scratched Silicon Substrates

Homoepitaxial overgrowth of (111) diamond films on Au-coated and Ni-coated substrates

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond

45-degree rotated epitaxial nucleation of diamond on silicon using chemical vapor deposition

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition

Evolution of growth characteristics around the junction in the mosaic diamond

Study of Si and Ge growth on Si(100) surface